Physical foundations of the formation of the silicon-based heterovarizonic structure

With the formation of binary unit cells based on the A$^{\mathrm{II}}$ and B$^{\mathrm{VI}}$, A$^{\mathrm{III}}$ and B$^{\mathrm{V}}$ elements, a heterovarizonic structure was obtained in the near-surface region of silicon, without destroying the crystal structure, without surface states with a thickness of about 5 $\mu$m. The resulting heterovarizonic structure has special fundamental parameters that ensure the absorption of light in a wide range of the solar spectrum from UV to IR radiation with $\lambda$ = 0.1 – 3 $\mu$m, i.e., it covers the entire solar spectrum.