Optimal conditions for nickel doping to improve the efficiency of silicon photoelectric cells

The stability of the surface layer of silicon enriched with nickel during heat treatment has been investigated. When heat treated below 900$^{\circ}$C, the nickel-rich layer is retained. It was found that doping a silicon photocell with nickel leads to an increase in efficiency regardless of the depth of the $p$–$n$ junction. Optimal conditions for the diffusion of nickel into silicon: $T$ = 800–850$^{\circ}$С, $t$ = 30 min. An increase in the short-circuit current of nickel-doped photocells was observed in the entire investigated spectral region. It is shown that alloying with nickel prior to the formation of the $p$–$n$ junction of the photocell is more efficient and technological. The improvement in the parameters of the photocell upon alloying with nickel is mainly associated with the properties of the surface layer. It is shown that alloying with nickel prior to the formation of the $p$–$n$ junction of the photocell is more efficient and technological. The improvement in the parameters of the photocell upon alloying with nickel is mainly associated with the properties of the surface layer.