An infrared radiation photoresistor based on silicon with nanoclusters of manganese atoms

The possibility of using silicon with the nanoclusters of manganese atoms for creating photoresistors in the spectral region $\lambda$ = 1.2–3 $\mu$m is shown. It is found that such photodetectors possess a threshold sensitivity of about 10$^{-11}$ W at a wavelength of 1.55 $\mu$m. The quantum efficiency at a wavelength of 2 $\mu$m exceeds 10% and is 0.1% at a wavelength of 2.5 $\mu$m, which makes it possible to use the impurity photosensitivity of silicon with the nanoclusters of manganese atoms for creating high-resolution array photodetectors operating in the spectral region of up to 2.5 $\mu$m.