Studying the effect of doping with nickel on silicon-based solar cells with a deep $p$–$n$-junction

It is shown that doping front side of solar cell with deep-lying $p$–$n$ junction with nickel atoms leads to significant increase in $J_{sc}$ – 89% and $V_{oc}$ – 19.7%. Additional heat treatment at 700$^{\circ}$C for one hour leads to an increase in $J_{sc}$ – 98,4% and $V_{oc}$ – 13,18%. Growth in efficiency of conversion of infrared radiation is occurs due to formation of clusters of nickel atoms, which are getter centers for uncontrolled recombination impurities.