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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, K. V. Bakhvalov, V. V. Shamakhov, S. O. Slipchenko, V. V. Andryushkin, N. A. Pikhtin, “Optical absorption in a waveguide based on an n-type AlGaAs heterostructure”, Kvantovaya Elektronika, 51:11 (2021), 987–991 [Quantum Electron., 51:11 (2021), 987–991 ] |
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Yu. K. Bobretsova, D. A. Veselov, A. A. Podoskin, N. V. Voronkova, S. O. Slipchenko, M. A. Ladugin, T. A. Bagaev, A. A. Marmalyuk, N. A. Pikhtin, “Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures”, Kvantovaya Elektronika, 51:2 (2021), 124–128 [Quantum Electron., 51:2 (2021), 124–128 ] |
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2020 |
3. |
A. V. Babichev, D. A. Pashnev, D. V. Denisov, A. G. Gladyshev, Yu. K. Bobretsova, S. O. Slipchenko, L. Ya. Karachinsky, I. I. Novikov, D. A. Firsov, L. E. Vorob'ev, N. A. Pikhtin, A. Yu. Egorov, “Study of the spectra of arched-cavity quantum-cascade lasers”, Optics and Spectroscopy, 128:6 (2020), 696–700 ; Optics and Spectroscopy, 128:6 (2020), 702–706 |
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4. |
E. O. Batura, Yu. K. Bobretsova, M. V. Bogdanovich, D. A. Veselov, A. V. Grigor'ev, V. N. Dudikov, A. M. Kot, N. A. Pikhtin, A. G. Ryabtsev, G. I. Ryabtsev, S. O. Slipchenko, P. V. Shpak, “Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light”, Kvantovaya Elektronika, 50:9 (2020), 822–825 [Quantum Electron., 50:9 (2020), 822–825 ] |
5. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, V. A. Kryuchkov, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, “Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers”, Kvantovaya Elektronika, 50:8 (2020), 722–726 [Quantum Electron., 50:8 (2020), 722–726 ] |
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6. |
V. V. Dyudelev, D. A. Mikhailov, A. V. Babichev, A. D. Andreev, S. N. Losev, E. A. Kognovitskaya, Yu. K. Bobretsova, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, D. V. Denisov, I. I. Novikov, L. Ya. Karachinsky, V. I. Kuchinskii, A. Yu. Egorov, G. S. Sokolovskii, “High-power (>1 W) room-temperature quantum-cascade lasers for the long-wavelength IR region”, Kvantovaya Elektronika, 50:2 (2020), 141–142 [Quantum Electron., 50:2 (2020), 141–142 ] |
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2019 |
7. |
L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, A. G. Gladyshev, E. S. Kolodeznyi, S. S. Rochas, A. S. Kurochkin, Yu. K. Bobretsova, A. A. Klimov, D. V. Denisov, K. O. Voropaev, A. S. Ionov, V. E. Bugrov, A. Yu. Egorov, “Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice”, Optics and Spectroscopy, 127:6 (2019), 963–966 ; Optics and Spectroscopy, 127:6 (2019), 1053–1056 |
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8. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, L. S. Vavilova, V. V. Shamakhov, S. O. Slipchenko, N. A. Pikhtin, “Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers”, Kvantovaya Elektronika, 49:7 (2019), 661–665 [Quantum Electron., 49:7 (2019), 661–665 ] |
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9. |
Yu. K. Bobretsova, D. A. Veselov, N. V. Voronkova, S. O. Slipchenko, V. A. Strelets, M. V. Bogdanovich, P. V. Shpak, M. A. Ladugin, A. A. Marmalyuk, N. A. Pikhtin, “Pulsed laser module based on a high-power semiconductor laser for the spectral range 1500–1600 nm”, Kvantovaya Elektronika, 49:5 (2019), 488–492 [Quantum Electron., 49:5 (2019), 488–492 ] |
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2018 |
10. |
E. S. Kolodeznyi, S. S. Rochas, A. S. Kurochkin, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, Yu. K. Bobretsova, A. A. Klimov, S. A. Blokhin, K. O. Voropaev, A. S. Ionov, “Optical gain of 1550-nm range multiple-quantum-well heterostructures and limiting modulation frequencies of vertical-cavity surface-emitting lasers based on them”, Optics and Spectroscopy, 125:2 (2018), 229–233 ; Optics and Spectroscopy, 125:2 (2018), 238–242 |
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2016 |
11. |
D. A. Veselov, I. S. Shashkin, Yu. K. Bobretsova, K. V. Bakhvalov, A. V. Lyutetskiy, V. A. Kapitonov, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov, “Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1414–1419 ; Semiconductors, 50:10 (2016), 1396–1402 |
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