This article is cited in 8 scientific papers (total in 8 papers)
Laser physics and laser optics
Optical gain of 1550-nm range multiple-quantum-well heterostructures and limiting modulation frequencies of vertical-cavity surface-emitting lasers based on them
Abstract:
Results of investigation of 1550 nm range stripe semiconductor lasers fabricated from heterostructures with different designs of the gain medium are presented. It is shown that the proposed designs of the gain medium allow obtaining the effective lasing at high level of total optical losses, comparable with the typical optical losses in the vertical-cavity surface-emitting lasers. The evaluation of modal gain in different types of the gain mediummade it possible to estimate the possible frequencies of the small-signal modulation of vertically emitting lasers and proposed the ways to increase them up to 20 GHz or more.
Citation:
E. S. Kolodeznyi, S. S. Rochas, A. S. Kurochkin, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, Yu. K. Bobretsova, A. A. Klimov, S. A. Blokhin, K. O. Voropaev, A. S. Ionov, “Optical gain of 1550-nm range multiple-quantum-well heterostructures and limiting modulation frequencies of vertical-cavity surface-emitting lasers based on them”, Optics and Spectroscopy, 125:2 (2018), 229–233; Optics and Spectroscopy, 125:2 (2018), 238–242
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\paper Optical gain of 1550-nm range multiple-quantum-well heterostructures and limiting modulation frequencies of vertical-cavity surface-emitting lasers based on them
\jour Optics and Spectroscopy
\yr 2018
\vol 125
\issue 2
\pages 229--233
\mathnet{http://mi.mathnet.ru/os936}
\crossref{https://doi.org/10.21883/OS.2018.08.46365.95-18}
\elib{https://elibrary.ru/item.asp?id=35270068}
\transl
\jour Optics and Spectroscopy
\yr 2018
\vol 125
\issue 2
\pages 238--242
\crossref{https://doi.org/10.1134/S0030400X18080143}
Linking options:
https://www.mathnet.ru/eng/os936
https://www.mathnet.ru/eng/os/v125/i2/p229
This publication is cited in the following 8 articles:
S. A. Blokhin, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, A. G. Kuzmenkov, N. A. Maleev, V. V. Andryushkin, V. E. Bougrov, A. G. Gladyshev, D. V. Denisov, K. O. Voropaev, I. O. Zhumaeva, V. M. Ustinov, H. Li, S. C. Tian, S. Y. Han, G. A. Sapunov, A. Yu. Egorov, D. Bimberg, “1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers”, Semiconductors, 57:4 (2023), 221
S. A. Blokhin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. G. Kuzmenkov, A. M. Nadtochiy, V. N. Nevedomskiy, V. V. Andryushkin, S. S. Rochas, D. V. Denisov, K. O. Voropaev, I. O. Zhumaeva, V. M. Ustinov, A. Yu. Egorov, V. E. Bougrov, “Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers”, Tech. Phys., 68:12 (2023), 549
Andrey Babichev, Sergey Blokhin, Evgenii Kolodeznyi, Leonid Karachinsky, Innokenty Novikov, Anton Egorov, Si-Cong Tian, Dieter Bimberg, “Long-Wavelength VCSELs: Status and Prospects”, Photonics, 10:3 (2023), 268
Bull. Lebedev Physics Institute, 50:suppl. 2 (2023), S140–S147
Sergey A. Blokhin, Andrey V. Babichev, Andrey G. Gladyshev, Leonid Ya. Karachinsky, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Dmitrii V. Denisov, Kirill O. Voropaev, Irina O. Zhumaeva, Victor M. Ustinov, Anton Yu. Egorov, Nikolay N. Ledentsov, “High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance”, IEEE J. Quantum Electron., 58:2 (2022), 1
S S Rochas, I I Novikov, A V Babichev, A G Gladyshev, E S Kolodeznyi, L Ya Karachinsky, Yu K Bobretsova, A A Klimov, Yu M Shernyakov, A E Zhukov, A Yu Egorov, “1.55 µm range edge-emitting laser diodes based on InGaAs/InGaAlAs superlattice and InGaAs quantum wells”, J. Phys.: Conf. Ser., 1695:1 (2020), 012072
M. V. Maksimov, Yu. M. Shernyakov, F. I. Zubov, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, S. S. Rochas, E. S. Kolodeznyi, A. Yu. Egorov, A. E. Zhukov, “Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 μm spectral range based on phosphorous-free heterostructures”, Tech. Phys. Lett., 45:6 (2019), 549–552
L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, A. G. Gladyshev, E. S. Kolodeznyi, S. S. Rochas, A. S. Kurochkin, Yu. K. Bobretsova, A. A. Klimov, D. V. Denisov, K. O. Voropaev, A. S. Ionov, V. E. Bugrov, A. Yu. Egorov, “Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice”, Optics and Spectroscopy, 127:6 (2019), 1053–1056