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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil’nikova, K. E. Kudryavtsev, A. V. Novikov, P. A. Yunin, M. A. Kalinnikov, E. V. Skorokhodov, M. V. Shaleev, Z. F. Krasil'nik, “Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 766–772   |
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2020 |
| 2. |
A. N. Yablonskii, A. V. Novikov, M. V. Stepikhova, S. M. Sergeev, N. A. Baidakova, M. V. Shaleev, Z. F. Krasil'nik, “Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1150–1157 ; Semiconductors, 54:10 (2020), 1352–1359 |
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| 3. |
Zh. V. Smagina, A. V. Novikov, M. V. Stepikhova, V. A. Zinov'ev, E. E. Rodyakina, A. V. Nenashev, S. M. Sergeev, A. V. Peretokin, P. A. Kuchinskaya, M. V. Shaleev, S. A. Gusev, A. V. Dvurechenskii, “Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 708–715 ; Semiconductors, 54:8 (2020), 853–859 |
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2018 |
| 4. |
S. N. Nikolaev, V. S. Krivobok, V. S. Bagaev, E. E. Onishchenko, A. V. Novikov, M. V. Shaleev, “Visible emission from a dense biexciton gas in SiGe/Si quantum wells under external anisotropic strain”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:6 (2018), 371–377 ; JETP Letters, 107:6 (2018), 358–363   |
| 5. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. G. Reunov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, “On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1443–1446 ; Semiconductors, 52:12 (2018), 1547–1550 |
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2017 |
| 6. |
N. A. Baidakova, V. A. Verbus, E. E. Morozova, A. V. Novikov, E. V. Skorokhodov, M. V. Shaleev, D. V. Yurasov, A. Hombe, Y. Kurokawa, N. Usami, “Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1599–1604 ; Semiconductors, 51:12 (2017), 1542–1546 |
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| 7. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, A. V. Rykov, A. A. Sushkov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, A. N. Yablonskii, Z. F. Krasil'nik, “Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1579–1582 ; Semiconductors, 51:11 (2017), 1527–1530 |
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2016 |
| 8. |
V. S. Krivobok, S. N. Nikolaev, A. V. Novikov, M. V. Shaleev, V. S. Bagaev, E. E. Onishchenko, V. S. Lebedev, M. L. Skorikov, E. V. Utsina, M. V. Kochiev, “Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:4 (2016), 229–234 ; JETP Letters, 104:4 (2016), 231–235 |
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| 9. |
S. N. Nikolaev, V. S. Krivobok, V. S. Bagaev, E. E. Onishchenko, A. V. Novikov, M. V. Shaleev, “Fine structure of the emission spectrum of a two-dimensional electron-hole liquid in SiGe/Si quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:3 (2016), 161–166 ; JETP Letters, 104:3 (2016), 163–168 |
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| 10. |
N. A. Baidakova, A. V. Novikov, M. V. Shaleev, D. V. Yurasov, E. E. Morozova, D. V. Shengurov, Z. F. Krasil'nik, “Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1685–1689 ; Semiconductors, 50:12 (2016), 1657–1661 |
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| 11. |
A. V. Novikov, M. V. Shaleev, D. V. Yurasov, P. A. Yunin, “Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1657–1661 ; Semiconductors, 50:12 (2016), 1630–1634 |
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| 12. |
A. N. Yablonskii, R. Kh. Zhukavin, N. A. Bekin, A. V. Novikov, D. V. Yurasov, M. V. Shaleev, “On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1629–1633 ; Semiconductors, 50:12 (2016), 1604–1608 |
| 13. |
D. N. Lobanov, A. V. Novikov, P. A. Yunin, E. V. Skorokhodov, M. V. Shaleev, M. N. Drozdov, O. I. Khrykin, O. A. Buzanov, V. V. Alenkov, P. I. Folomin, A. B. Gritsenko, “Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1532–1536 ; Semiconductors, 50:11 (2016), 1511–1514 |
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| 14. |
V. B. Shmagin, S. N. Vdovichev, E. E. Morozova, A. V. Novikov, M. V. Shaleev, D. V. Shengurov, Z. F. Krasil'nik, “Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1497–1500 ; Semiconductors, 50:11 (2016), 1475–1478 |
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