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Publications in Math-Net.Ru |
Citations |
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2024 |
1. |
M. V. Dolgopolov, M. V. Elisov, S. A. Radzhapov, I. R. Rakhmankulov, A. S. Chipura, “Modeling of semiconductor heterostructures for energy converters and sensors”, Vestnik SamU. Estestvenno-Nauchnaya Ser., 30:1 (2024), 64–81 |
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2023 |
2. |
M. V. Dolgopolov, M. V. Elisov, S. A. Radzhapov, V. I. Chepurnov, A. S. Chipura, “Efficiency of activated nano-heterojunctions on silicon and silicon carbide substrates”, Comp. nanotechnol., 10:4 (2023), 91–102 |
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3. |
M. V. Dolgopolov, M. V. Elisov, S. A. Radzhapov, A. S. Chipura, “Scaling models of electrical properties of photo- and beta-converters with nano-heterojunctions”, Comp. nanotechnol., 10:1 (2023), 138–146 |
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2021 |
4. |
V. I. Chepurnov, S. A. Radzhapov, M. V. Dolgopolov, G. V. Puzyrnaya, A. V. Gurskaya, “Efficiency determination problems for SiC*/Si microstructures and contact formation”, Comp. nanotechnol., 8:3 (2021), 59–68 |
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2020 |
5. |
S. A. Radzhapov, R. Kh. Rakhimov, B. S. Radzhapov, M. A. Zufarov, “Calculation of stages of the technological process of manufacture of PPD detectors using computer mathematical modeling and production of alpha radiometer on their basis”, Comp. nanotechnol., 7:2 (2020), 21–28 |
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2019 |
6. |
S. A. Radzhapov, R. Kh. Rakhimov, B. S. Radzhapov, M. A. Zufarov, K. I. Vakhobov, “Development of silicon diffusion $n - p$-detectors of ionizing radiation”, Comp. nanotechnol., 6:3 (2019), 112–115 |
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7. |
S. A. Radzhapov, R. Kh. Rakhimov, B. S. Radzhapov, M. A. Zufarov, “Silicon-lithium $\Delta E$-detectors of alpha-radiation to the radiometer”, Comp. nanotechnol., 6:2 (2019), 157–159 |
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8. |
S. A. Radzhapov, R. Kh. Rakhimov, B. S. Radzhapov, M. A. Zufarov, Sh. Sharifov, “Development of radometer based on silicon detectors with a big sensitive area”, Comp. nanotechnol., 6:1 (2019), 65–68 |
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2018 |
9. |
S. A. Radzhapov, R. Kh. Rakhimov, M. Dzhanklich, M. A. Zufarov, B. S. Radzhapov, “Semiconductor nuclear radiation detectors on the basis of heterojunction structures of Al-$\alpha$Ge-pSi-Au for measurement of low intensive ionizing radiations”, Comp. nanotechnol., 2018, no. 3, 65–67 |
10. |
S. A. Radzhapov, B. S. Radzhapov, R. Kh. Rakhimov, “Features of the development of manufacturing technology for surface-barrier detectors of large diameter with a large working area sensitive for measuring the activity of natural isotopes”, Comp. nanotechnol., 2018, no. 1, 151–154 |
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2017 |
11. |
R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov, “Coordinate-sensitive detectors of ionizing radiation on the basis of the Si (Li) $p-i-n$ large-dimension structures”, Comp. nanotechnol., 2017, no. 3, 29–32 |
12. |
R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov, “Detectors of X-ray and gamma radiation on the basis of Al-nGe-pSi-Au structure”, Comp. nanotechnol., 2017, no. 3, 27–28 |
13. |
R. Kh. Rakhimov, R. A. Muminov, S. A. Radzhapov, Yu. S. Pindurin, B. S. Radzhapov, “The use of ergonometry based on silicon surface barrier detectors to monitor radon”, Comp. nanotechnol., 2017, no. 2, 85–88 |
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14. |
R. A. Muminov, S. A. Radzhapov, B. S. Radzhapov, “Examination and assessment of electrophysical and radiometric characteristics of the Si(Li)p-i-n-photodetecting plasticscintillation system”, Comp. nanotechnol., 2017, no. 1, 54–55 |
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2016 |
15. |
R. A. Muminov, S. A. Radzhapov, B. S. Radzhapov, R. Kh. Rakhimov, “The ionizing radiation detectors based on neutron-doped silicon”, Comp. nanotechnol., 2016, no. 4, 136–137 |
16. |
R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov, “Technological formation of large-size Si(Li) p-i-n radiation detectors”, Comp. nanotechnol., 2016, no. 1, 62–66 |
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2022 |
17. |
S. A. Radzhapov, K. M. Nurboev, F. G. Mullagalieva, M. A. Zufarov, B. S. Radzhapov, K. E. Ergashev, “Development of silicon detectors and electronic units for radiometer alpha-, beta and gamma-radiation”, Comp. nanotechnol., 9:3 (2022), 45–52 |
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