|
This article is cited in 6 scientific papers (total in 6 papers)
DEVELOPMENT OF NEW ENERGY UNITS BASED ON RENEWABLE KINDS OF ENERGY
Efficiency determination problems for SiC*/Si microstructures and contact formation
V. I. Chepurnova, S. A. Radzhapovb, M. V. Dolgopolovac, G. V. Puzyrnayaa, A. V. Gurskayacd a Samara National Research University named after Academician S.P. Korolev
b Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
c Samara State Technical University
d Interuniversity Research Center for Theoretical Materials Science
Abstract:
The paper discusses the efficiency of converting radionuclide energy into electrical energy inside a semiconductor structure in the context of the betavoltaic application. In the molecular composition of Silicon Carbide semiconductor structures, Carbon-14 atoms functionally serve as the source of radiochemical decay energy, and the conductivity component of the n- or p-type semiconductor structure is able to directly convert this energy into electrical form. The proposed version of the beta-converter based on the C-14 radionuclide has a worldwide novelty, since this radionuclide is used in the concentration at the level of an alloying impurity that replaces the stable Carbon-12 atoms in the Silicon Carbide molecule. The presence in small quantities, one atom of the radioisotope C-14 per thousand or even a million atoms of the stable radioisotope C-12, gives the semiconductor material new energy-useful properties. The manifestations of the betavoltaic effect when replacing Silicon Carbide C-12 with radionuclide C-14 in a molecule determine the efficiency and choice of the contact formation options for practical use of charge generation in Silicon Carbide heterostructures.
Keywords:
Betavoltaics, Silicon Carbide heterostructeres, micro-alloying, radionuclide C-14, heteroendotaxy, defects formation, p-n-junction, energy efficiency.
Received: 15.08.2021
Citation:
V. I. Chepurnov, S. A. Radzhapov, M. V. Dolgopolov, G. V. Puzyrnaya, A. V. Gurskaya, “Efficiency determination problems for SiC*/Si microstructures and contact formation”, Comp. nanotechnol., 8:3 (2021), 59–68
Linking options:
https://www.mathnet.ru/eng/cn348 https://www.mathnet.ru/eng/cn/v8/i3/p59
|
Statistics & downloads: |
Abstract page: | 632 | Full-text PDF : | 36 | References: | 1 |
|