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This article is cited in 4 scientific papers (total in 4 papers)
NANOTECHNOLOGY AND NANOMATERIALS
Scaling models of electrical properties of photo- and beta-converters with nano-heterojunctions
M. V. Dolgopolovab, M. V. Elisova, S. A. Radzhapovc, A. S. Chipurab a Samara State Technical University
b Samara State Aerospace University
c Institute of Physics and Technology
of the Scientific and Production Association “Physics-Sun”
of the Academy of Sciences of the Republic of Uzbekistan
Abstract:
Abstract. The new methodology is developed and the computer simulation of scaling the electrical properties of nanochips-generators of a semiconductor energy converter based on nanoscale contact heterojunctions to ensure maximum power is considered. The variant of optimization of the scaling solution is represented by the connection of nanoheterojunctions with an increase in the current density of nonequilibrium carriers and the open circuit voltage. A generalized equivalent scheme for variations of internal properties and identification of experimental data is presented. The influence of the type of scaling and model parameters is analyzed.
Keywords:
scaling, nano-heterojunction, current-voltage characteristic, semiconductor converter, mathematical modeling, silicon carbide heterostructures, alloying, energy efficiency, semiconductor microgenerators of ionization currents and voltages, charge point defect formation, equivalent circuit.
Citation:
M. V. Dolgopolov, M. V. Elisov, S. A. Radzhapov, A. S. Chipura, “Scaling models of electrical properties of photo- and beta-converters with nano-heterojunctions”, Comp. nanotechnol., 10:1 (2023), 138–146
Linking options:
https://www.mathnet.ru/eng/cn419 https://www.mathnet.ru/eng/cn/v10/i1/p138
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Abstract page: | 464 | Full-text PDF : | 39 |
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