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Computational nanotechnology, 2016, Issue 1, Pages 62–66 (Mi cn64)  
This article is cited in 1 scientific paper (total in 1 paper)

MECHANICAL ENGINEERING TECHNOLOGY. NUCLEAR EQUIPMENT. ELECTRICAL TECHNOLOGY

Technological formation of large-size Si(Li) p-i-n radiation detectors

R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov

Physical-Technical Institute, Uzbekistan Academy of Sciences
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Abstract: In this report we consider physical and technological features of manufacture Si(Li) nuclear radiation detectors of large size (Ø$\ge$ 60 mm, W=4 mm) when necessary for the formation of Si(Li) p-i-n structure using a new method of carrying out the process of drift of lithium ions with the help of pulsed electric field.
Keywords: semiconductor Si(Li) p-i-n detectors, monocrystalline silicon, diffusion, drift, lithium, sensitive area.
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Document Type: Article
Language: Russian
Citation: R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov, “Technological formation of large-size Si(Li) p-i-n radiation detectors”, Comp. nanotechnol., 2016, no. 1, 62–66
Citation in format AMSBIB
\Bibitem{MumRadTos16}
\by R.~A.~Muminov, S.~A.~Radzhapov, Y.~Q.~Toshmurodov, B.~S.~Radzhapov
\paper Technological formation of large-size Si(Li) p-i-n radiation detectors
\jour Comp. nanotechnol.
\yr 2016
\issue 1
\pages 62--66
\mathnet{http://mi.mathnet.ru/cn64}
\elib{https://elibrary.ru/item.asp?id=25821417}
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    • This publication is cited in the following 1 articles:
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