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Computational nanotechnology, 2016, Issue 1, Pages 62–66
(Mi cn64)
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This article is cited in 1 scientific paper (total in 1 paper)
MECHANICAL ENGINEERING TECHNOLOGY. NUCLEAR EQUIPMENT. ELECTRICAL TECHNOLOGY
Technological formation of large-size Si(Li) p-i-n radiation detectors
R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov Physical-Technical Institute, Uzbekistan Academy of Sciences
Abstract:
In this report we consider physical and technological features of manufacture Si(Li) nuclear radiation detectors of large size (Ø$\ge$ 60 mm, W=4 mm) when necessary for the formation of Si(Li) p-i-n structure using a new method of carrying out the process of drift of lithium ions with the help of pulsed electric field.
Keywords:
semiconductor Si(Li) p-i-n detectors, monocrystalline silicon, diffusion, drift, lithium, sensitive area.
Citation:
R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov, “Technological formation of large-size Si(Li) p-i-n radiation detectors”, Comp. nanotechnol., 2016, no. 1, 62–66
Linking options:
https://www.mathnet.ru/eng/cn64 https://www.mathnet.ru/eng/cn/y2016/i1/p62
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Abstract page: | 151 | Full-text PDF : | 62 | References: | 20 |
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