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Computational nanotechnology, 2019, Volume 6, Issue 3, Pages 112–115
DOI: https://doi.org/10.33693/2313-223X-2019-6-3-112-115 (Mi cn269) 		 
This article is cited in 1 scientific paper (total in 1 paper)

05.14.00. POWER
05.14.08 POWER STATIONS ON THE BASIS RENEWABLE ENERGY

Development of silicon diffusion $n - p$-detectors of ionizing radiation

S. A. Radzhapova, R. Kh. Rakhimovb, B. S. Radzhapova, M. A. Zufarova, K. I. Vakhobovc

a Tashkent Technical University
b Institute of Materials Science «Physics-Sun», Uzbekistan Academy of Sciences
c Tashkent State Technical University
Citations (1)
DOI: https://doi.org/10.33693/2313-223X-2019-6-3-112-115
Abstract: The paper presents an optimized manufacturing technology of silicon diffusion $n - p$-detectors, as well as some research data on the spectrometric characteristics of silicon diffusion detectors of charged particles.
Keywords: monocrystalline silicon, silicon diffusion detectors, alpha, – beta, – gamma radiation.
Funding agency Grant number
Academy of Sciences of the Republic of Uzbekistan А.3-18
ФА-Атех-2018-32
Document Type: Article
Language: Russian
Citation: S. A. Radzhapov, R. Kh. Rakhimov, B. S. Radzhapov, M. A. Zufarov, K. I. Vakhobov, “Development of silicon diffusion $n - p$-detectors of ionizing radiation”, Comp. nanotechnol., 6:3 (2019), 112–115
Citation in format AMSBIB
\Bibitem{RadRakRad19}
\by S.~A.~Radzhapov, R.~Kh.~Rakhimov, B.~S.~Radzhapov, M.~A.~Zufarov, K.~I.~Vakhobov
\paper Development of silicon diffusion $n - p$-detectors of ionizing radiation
\jour Comp. nanotechnol.
\yr 2019
\vol 6
\issue 3
\pages 112--115
\mathnet{http://mi.mathnet.ru/cn269}
\crossref{https://doi.org/10.33693/2313-223X-2019-6-3-112-115}
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  • https://www.mathnet.ru/eng/cn/v6/i3/p112
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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