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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
V. A. Belyakov, I. V. Makartsev, A. G. Fefelov, S. V. Obolensky, A. P. Vasil'ev, A. G. Kuz'menkov, M. M. Kulagina, N. A. Maleev, “Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 890–894   |
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2020 |
| 2. |
D. I. Dyukov, A. G. Fefelov, A. V. Korotkov, D. G. Pavel'ev, V. A. Kozlov, E. S. Obolenskaya, A. S. Ivanov, S. V. Obolensky, “Comparison of the efficiency of promising heterostructure frequency-multiplier diodes of the THz-frequency range”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1158–1162 ; Semiconductors, 54:10 (2020), 1360–1364 |
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2019 |
| 3. |
N. A. Maleev, A. P. Vasil'ev, A. G. Kuz'menkov, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, S. N. Maleev, V. A. Belyakov, E. V. Petryakova, Yu. P. Kudryashova, E. L. Fefelova, I. V. Makartsev, S. A. Blokhin, F. A. Akhmedov, A. V. Egorov, A. G. Fefelov, V. M. Ustinov, “InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 29–33 ; Tech. Phys. Lett., 45:11 (2019), 1092–1096 |
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2018 |
| 4. |
M. M. Venediktov, E. A. Tarasova, A. D. Bozhen'kina, S. V. Obolensky, V. V. Elesin, G. V. Chukov, I. O. Metelkin, M. A. Krevskiy, D. I. Dyukov, A. G. Fefelov, “Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1414–1420 ; Semiconductors, 52:12 (2018), 1518–1524 |
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| 5. |
A. A. Andronov, A. A. Andronov, K. V. Maremianin, V. I. Pozdnjakova, Yu. N. Nozdrin, A. A. Marmalyuk, A. A. Padalitsa, M. A. Ladugin, V. A. Belyakov, I. V. Ladenkov, A. G. Fefelov, “THz stimulated emission from simple superlattice in positive differential conductivity region”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 463 ; Semiconductors, 52:4 (2018), 431–435 |
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2017 |
| 6. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, A. G. Fefelov, D. V. Yurasov, Z. F. Krasil'nik, “Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1530–1533 ; Semiconductors, 51:11 (2017), 1477–1480 |
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| 7. |
N. A. Maleev, V. A. Belyakov, A. P. Vasil'ev, M. A. Bobrov, S. A. Blokhin, M. M. Kulagina, A. G. Kuz'menkov, V. N. Nevedomskiy, Yu. A. Guseva, S. N. Maleev, I. V. Ladenkov, E. L. Fefelova, A. G. Fefelov, V. M. Ustinov, “Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1484–1488 ; Semiconductors, 51:11 (2017), 1431–1434 |
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2015 |
| 8. |
A. A. Andronov, E. P. Dodin, D. I. Zinchenko, Yu. N. Nozdrin, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Belyakov, I. V. Ladenkov, A. G. Fefelov, “Stimulated emission at transitions between Wannier–Stark ladders in semiconductor superlattices”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:4 (2015), 235–239 ; JETP Letters, 102:4 (2015), 207–211   |
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