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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil’nikova, K. E. Kudryavtsev, A. V. Novikov, P. A. Yunin, M. A. Kalinnikov, E. V. Skorokhodov, M. V. Shaleev, Z. F. Krasil'nik, “Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 766–772   |
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2019 |
| 2. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil’nikova, P. A. Bushuikin, A. N. Yablonskii, A. V. Novikov, V. Yu. Davydov, P. A. Yunin, M. I. Kalinnikov, E. V. Skorokhodov, Z. F. Krasil'nik, “Emission properties of heavily doped epitaxial indium-nitride layers”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1395–1400 ; Semiconductors, 53:10 (2019), 1357–1362 |
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2017 |
| 3. |
P. A. Bushuikin, A. V. Novikov, B. A. Andreev, D. N. Lobanov, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil’nikova, E. V. Demidov, G. M. Savchenko, V. Yu. Davydov, “Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1594–1598 ; Semiconductors, 51:12 (2017), 1537–1541 |
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2016 |
| 4. |
D. N. Lobanov, A. V. Novikov, P. A. Yunin, E. V. Skorokhodov, M. V. Shaleev, M. N. Drozdov, O. I. Khrykin, O. A. Buzanov, V. V. Alenkov, P. I. Folomin, A. B. Gritsenko, “Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1532–1536 ; Semiconductors, 50:11 (2016), 1511–1514 |
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| 5. |
D. N. Lobanov, A. V. Novikov, B. A. Andreev, P. A. Bushuikin, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil’nikova, “Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 264–268 ; Semiconductors, 50:2 (2016), 261–265 |
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2011 |
| 6. |
V. S. Bagaev, V. S. Krivobok, S. N. Nikolaev, E. E. Onishchenko, M. L. Skorikov, A. V. Novikov, D. N. Lobanov, “Condensation of excitons and the spectrum of multiparticle states in SiGe/Si quantum wells: The role of the barrier in the conduction band”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:1 (2011), 63–67 ; JETP Letters, 94:1 (2011), 63–67   |
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2010 |
| 7. |
T. M. Burbaev, M. N. Gordeev, D. N. Lobanov, A. V. Novikov, M. M. Rzaev, N. N. Sibel'din, M. L. Skorikov, V. A. Tsvetkov, D. V. Shepel', “Electron-hole liquid and excitonic molecules in quasi-two-dimensional SiGe layers of Si/SiGe/Si heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:5 (2010), 341–345 ; JETP Letters, 92:5 (2010), 305–309 |
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2002 |
| 8. |
N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, A. N. Yablonskii, “Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002), 425–429 ; JETP Letters, 76:6 (2002), 365–369 |
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