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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
S. L. Kovalenko, T. V. Pavlova, B. V. Andryushechkin, K. N. Eltsov, “Temperature-programmed growth of quasi-free-standing N-doped graphene single crystals from acetonitrile molecules”, Pis'ma v Zh. Èksper. Teoret. Fiz., 111:10 (2020), 697–704   ; JETP Letters, 111:10 (2020), 591–597   |
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2017 |
| 2. |
B. V. Andryushechkin, V. M. Shevlyuga, T. V. Pavlova, G. M. Zhidomirov, K. N. Eltsov, “Structural transformations on an oxidized $\mathrm{Ag(111)}$ surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017), 270–274 ; JETP Letters, 105:5 (2017), 292–296 |
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| 3. |
S. L. Kovalenko, T. V. Pavlova, B. V. Andryushechkin, O. I. Kanishcheva, K. N. Eltsov, “Epitaxial growth of a graphene single crystal on the Ni(111) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:3 (2017), 170–174 ; JETP Letters, 105:3 (2017), 185–188 |
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2014 |
| 4. |
K. N. El'tsov, A. A. Vedeneev, “The switching of GaAs(001) termination by action of molecular
iodine”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:8 (2014), 537–541 ; JETP Letters, 99:8 (2014), 466–470 |
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2007 |
| 5. |
V. Yu. Yurov, B. V. Andryushechkin, K. N. El'tsov, V. V. Cherkez, “Formation of nanoislands in the course of copper deposition on a Cu(111)-($9\times 9$)-Ag surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:1 (2007), 35–40 ; JETP Letters, 86:1 (2007), 33–38 |
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2006 |
| 6. |
B. V. Andryushechkin, K. N. El'tsov, V. V. Cherkez, “Epitaxial growth of semiconductor thin films on metals in the halogenation process. Atomic structure of copper iodide on the Cu(110) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:4 (2006), 195–200 ; JETP Letters, 83:4 (2006), 162–166 |
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2005 |
| 7. |
A. A. Vedeneev, K. N. El'tsov, “Atomic structure of GaAs(001)-c(8×2) and adsorption sites of iodine atoms at low coverage”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:1 (2005), 46–51 ; JETP Letters, 82:1 (2005), 44–48 |
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2000 |
| 8. |
B. V. Andryushechkin, K. N. El'tsov, V. M. Shevlyuga, “Scanning tunneling microscopy of 'commensurate – incommensurate' structural phase transitions in the chemisorbed layers of halogens”, UFN, 170:5 (2000), 571–575 ; Phys. Usp., 43:5 (2000), 527–530 |
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