A. A. Vedeneev, K. N. El'tsov, “Atomic structure of GaAs(001)-c(8×2) and adsorption sites of iodine atoms at low coverage”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:1 (2005), 46–51; JETP Letters, 82:1 (2005), 44

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 82, Issue 1, Pages 46–51 (Mi jetpl1504)

This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Atomic structure of GaAs(001)-c(8×2) and adsorption sites of iodine atoms at low coverage

A. A. Vedeneev, K. N. El'tsov

Natural Sciences Center at A. M. Prokhorov General Physics Institute of RAS

Full-text PDF (276 kB) Citations (7)

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Abstract: Atomically resolved scanning tunneling microscopy images observed by us correspond to the ζ model of GaAs(001)-c(8×2) atomic structure. At low coverage (θ < 0.1), iodine atoms occupy sites above vacation rows between arsenic atoms located in the upper layer.

Received: 31.05.2005

English version:
Journal of Experimental and Theoretical Physics Letters, 2005, Volume 82, Issue 1, Pages 44–48
DOI: https://doi.org/10.1134/1.2045337

Bibliographic databases:

Document Type: Article

PACS: 07.79.Cz, 68.35.Bs, 68.47.Fg, 71.55.Eq

Language: Russian

Citation: A. A. Vedeneev, K. N. El'tsov, “Atomic structure of GaAs(001)-c(8×2) and adsorption sites of iodine atoms at low coverage”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:1 (2005), 46–51; JETP Letters, 82:1 (2005), 44–48

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This publication is cited in the following 7 articles:

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