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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 82, Issue 1, Pages 46–51 (Mi jetpl1504)  

This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Atomic structure of GaAs(001)-c(8×2) and adsorption sites of iodine atoms at low coverage

A. A. Vedeneev, K. N. El'tsov

Natural Sciences Center at A. M. Prokhorov General Physics Institute of RAS
Full-text PDF (276 kB) Citations (7)
References:
Abstract: Atomically resolved scanning tunneling microscopy images observed by us correspond to the ζ model of GaAs(001)-c(8×2) atomic structure. At low coverage (θ < 0.1), iodine atoms occupy sites above vacation rows between arsenic atoms located in the upper layer.
Received: 31.05.2005
English version:
Journal of Experimental and Theoretical Physics Letters, 2005, Volume 82, Issue 1, Pages 44–48
DOI: https://doi.org/10.1134/1.2045337
Bibliographic databases:
Document Type: Article
PACS: 07.79.Cz, 68.35.Bs, 68.47.Fg, 71.55.Eq
Language: Russian


Citation: A. A. Vedeneev, K. N. El'tsov, “Atomic structure of GaAs(001)-c(8×2) and adsorption sites of iodine atoms at low coverage”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:1 (2005), 46–51; JETP Letters, 82:1 (2005), 44–48
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  • https://www.mathnet.ru/eng/jetpl/v82/i1/p46
  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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