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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2017, Volume 105, Issue 3, Pages 170–174
DOI: https://doi.org/10.7868/S0370274X17030080
(Mi jetpl5184)
 

This article is cited in 14 scientific papers (total in 14 papers)

CONDENSED MATTER

Epitaxial growth of a graphene single crystal on the Ni(111) surface

S. L. Kovalenkoa, T. V. Pavlovaa, B. V. Andryushechkina, O. I. Kanishchevaab, K. N. Eltsova

a Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, Russia
b Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Russia
References:
Abstract: The thermally controlled synthesis of graphene from propylene molecules on the Ni(111) surface in ultrahigh vacuum is studied by scanning tunneling microscopy and density functional theory. It is established that the adsorption of propylene on Ni(111) atomic terraces at room temperature results in the dehydration of propylene molecules with the formation of single-atomic carbon chains and in the complete dissociation of propylene at the edges of atomic steps with the subsequent diffusion of carbon atoms below the surface. The annealing of such a sample at 500$^\circ$ C leads to the formation of multilayer graphene islands both from surface atomic chains and by the segregation of carbon atoms collected in the upper nickel atomic layers. The process of formation of an epitaxial graphene monolayer until the complete filling of the nickel surface is controllably observed. Atomic defects seen on the graphene surface are interpreted as individual nickel atoms incorporated into graphene mono- or bivacancies.
Funding agency Grant number
Russian Science Foundation 16-12-00050
Received: 14.12.2016
English version:
Journal of Experimental and Theoretical Physics Letters, 2017, Volume 105, Issue 3, Pages 185–188
DOI: https://doi.org/10.1134/S0021364017030080
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. L. Kovalenko, T. V. Pavlova, B. V. Andryushechkin, O. I. Kanishcheva, K. N. Eltsov, “Epitaxial growth of a graphene single crystal on the Ni(111) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:3 (2017), 170–174; JETP Letters, 105:3 (2017), 185–188
Citation in format AMSBIB
\Bibitem{KovPavAnd17}
\by S.~L.~Kovalenko, T.~V.~Pavlova, B.~V.~Andryushechkin, O.~I.~Kanishcheva, K.~N.~Eltsov
\paper Epitaxial growth of a graphene single crystal on the Ni(111) surface
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2017
\vol 105
\issue 3
\pages 170--174
\mathnet{http://mi.mathnet.ru/jetpl5184}
\crossref{https://doi.org/10.7868/S0370274X17030080}
\elib{https://elibrary.ru/item.asp?id=28367902}
\transl
\jour JETP Letters
\yr 2017
\vol 105
\issue 3
\pages 185--188
\crossref{https://doi.org/10.1134/S0021364017030080}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000399598700008}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85017687423}
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  • This publication is cited in the following 14 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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