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This article is cited in 1 scientific paper (total in 1 paper)
CONDENSED MATTER
The switching of GaAs(001) termination by action of molecular
iodine
K. N. El'tsov, A. A. Vedeneev A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow
Abstract:
This paper presents experimental results of an ultrahigh vacuum
study of
4${\times}$2/c(8${\times}$2)${\longrightarrow}$2${\times}$4/c(2${\times}$8)
structural transition on GaAs(001) caused by the thermal removal of the
saturated iodine monolayer formed at
GaAs(001)-4${\times}$2/c(8${\times}$2).
It has been found out that the original
c(8${\times}$2) low energy electron
diffraction pattern transforms into 4${\times}$1 at
0.6 ML of iodine coverage
and then keeps up to its saturation at 1.0 ML.
We have determined that GaI is
the only chemical product of the iodine action, its double peak was observed
in the thermal desorption spectra at $T = 150{\div}370\,^{\circ}$C. The
explanation of surface processes underlying
4${\times}$2/c(8${\times}$2)${\longrightarrow}$2${\times}$4/c(2${\times}$8)
phase transition is presented below.
Received: 13.03.2014
Citation:
K. N. El'tsov, A. A. Vedeneev, “The switching of GaAs(001) termination by action of molecular
iodine”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:8 (2014), 537–541; JETP Letters, 99:8 (2014), 466–470
Linking options:
https://www.mathnet.ru/eng/jetpl3718 https://www.mathnet.ru/eng/jetpl/v99/i8/p537
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