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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
G. V. Benemanskaya, S. A. Kukushkin, S. N. Timoshnev, “Aromatic-like carbon nanostructures created on the vicinal SiC surfaces”, Fizika Tverdogo Tela, 61:12 (2019), 2436   ; Phys. Solid State, 61:12 (2019), 2455–2458 |
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| 2. |
S. N. Timoshnev, A. M. Mizerov, G. V. Benemanskaya, S. A. Kukushkin, A. D. Bouravlev, “Photoemission studies of the electronic structure of GaN grown by plasma assisted molecular beam epitaxy”, Fizika Tverdogo Tela, 61:12 (2019), 2294–2297 ; Phys. Solid State, 61:12 (2019), 2282–2285 |
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| 3. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, A. V. Osipov, S. N. Timoshnev, “A new type of carbon nanostructure on a vicinal SiÑ(111)-8$^\circ$ surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 17–20 ; Tech. Phys. Lett., 45:3 (2019), 201–204 |
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2018 |
| 4. |
G. V. Benemanskaya, M. N. Lapushkin, D. E. Marchenko, S. N. Timoshnev, “The electronic structure of the Cs/$n$-GaN(0001) nano-interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018), 50–58 ; Tech. Phys. Lett., 44:3 (2018), 247–250 |
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2016 |
| 5. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, B. V. Senkovskiy, “The C 1$s$ core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4$^\circ$ layer and Cs/SiC/Si(111)-4$^\circ$ interface”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1348–1352 ; Semiconductors, 50:10 (2016), 1327–1332 |
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| 6. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, B. V. Senkovskiy, S. N. Timoshnev, “Induced surface states of the ultrathin Âà/3$C$-SiC(111) interface”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 465–469 ; Semiconductors, 50:4 (2016), 457–461 |
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| 7. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, S. N. Timoshnev, “Photoemission studies of the vicinal SiC(100) 4$^\circ$ surface and the Cs/SiC(100) 4$^\circ$ interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016), 51–57 ; Tech. Phys. Lett., 42:12 (2016), 1145–1148 |
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2012 |
| 8. |
G. V. Benemanskaya, M. N. Lapushkin, V. P. Evtikhiev, A. S. Shkolnikov, “Photoemission from InAs/GaAs quantum dots decorated with cesium adatoms”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:5 (2012), 363–366 ; JETP Letters, 96:5 (2012), 332–335   |
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2010 |
| 9. |
G. V. Benemanskaya, V. N. Zhmerik, M. N. Lapushkin, S. N. Timoshnev, “Electronic structure of a Ba/<i>n</i>-AlGaN(0001) interface and the formation of a degenerate 2D electron gas”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:12 (2010), 739–743 ; JETP Letters, 91:12 (2010), 670–674 |
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2008 |
| 10. |
G. V. Benemanskaya, V. S. Vikhnin, S. N. Timoshnev, “Self-organization of nanostructures on the <i>n</i> -GaN(0001) surface in the Cs and Ba adsorption”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:2 (2008), 119–123 ; JETP Letters, 87:2 (2008), 111–114 |
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2005 |
| 11. |
G. V. Benemanskaya, G. É. Frank-Kamenetskaya, “Charge accumulation layer on the <i>n</i>-GaN (0001) surface with ultrathin Ba coatings”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005), 642–645 ; JETP Letters, 81:10 (2005), 519–522 |
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2003 |
| 12. |
I. V. Afanas'ev, G. V. Benemanskaya, V. S. Vikhnin, G. É. Frank-Kamenetskaya, N. M. Shmidt, “Oscillations in the threshold photoemission spectra of GaN(0001) with submonolayer Cs coverages”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:5 (2003), 270–274 ; JETP Letters, 77:5 (2003), 226–229 |
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2001 |
| 13. |
G. V. Benemanskaya, K. Y. Rovinskii, G. É. Frank-Kamenetskaya, “Excitation of 2D plasmons in a Cs/W(110) system”, Pis'ma v Zh. Èksper. Teoret. Fiz., 74:2 (2001), 88–91 ; JETP Letters, 74:2 (2001), 84–86 |
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1987 |
| 14. |
G. V. Benemanskaya, O. P. Burmistrova, M. N. Lapushkin, “Formation of two-dimensional electron bands in the $\mathrm{W} (110)$–$\mathrm{Ba}$ system at monolayer coverages”, Fizika Tverdogo Tela, 29:6 (1987), 1646–1652 |
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