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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, Yu. G. Shreter, “Current noise and efficiency droop of light-emitting diodes in defect-assisted carrier tunneling from an InGaN/GaN quantum well”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 104–110   ; Semiconductors, 53:1 (2019), 99–105 |
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2018 |
| 2. |
N. I. Bochkareva, Yu. G. Shreter, “Effect of deep centers on charge-carrier confinement in InGaN/GaN quantum wells and on led efficiency”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 796–803 ; Semiconductors, 52:7 (2018), 934–941 |
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2017 |
| 3. |
N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, M. V. Virko, V. S. Kogotkov, A. A. Leonidov, P. N. Vorontsov-Velyaminov, I. A. Sheremet, Yu. G. Shreter, “Hopping conductivity and dielectric relaxation in Schottky barriers on GaN”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1235–1242 ; Semiconductors, 51:9 (2017), 1186–1193 |
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| 4. |
V. V. Voronenkov, M. V. Virko, V. S. Kogotkov, A. A. Leonidov, A. V. Pinchuk, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, I. A. Sheremet, Yu. G. Shreter, “On the laser lift-off of lightly doped micrometer-thick $n$-GaN films from substrates via the absorption of IR radiation in sapphire”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 116–123 ; Semiconductors, 51:1 (2017), 115–121 |
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2016 |
| 5. |
N. I. Bochkareva, I. A. Sheremet, Yu. G. Shreter, “Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1387–1394 ; Semiconductors, 50:10 (2016), 1369–1376 |
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| 6. |
M. V. Virko, V. S. Kogotkov, A. A. Leonidov, V. V. Voronenkov, Yu. T. Rebane, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, Yu. G. Shreter, “On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 711–716 ; Semiconductors, 50:5 (2016), 699–704 |
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| 7. |
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, V. A. Tarala, Yu. G. Shreter, “The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016), 1–8 ; Tech. Phys. Lett., 42:11 (2016), 1099–1102 |
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