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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 22, Pages 1–8
(Mi pjtf6253)
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This article is cited in 5 scientific papers (total in 5 papers)
The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
N. I. Bochkarevaa, A. M. Ivanova, A. V. Klochkova, V. A. Taralab, Yu. G. Shretera a Ioffe Institute, St. Petersburg
b North-Caucasus Federal University, Stavropol, Russia
Abstract:
It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125$^\circ$C at a current density of 150 A/cm$^2$ stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency.
Received: 19.04.2016
Citation:
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, V. A. Tarala, Yu. G. Shreter, “The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016), 1–8; Tech. Phys. Lett., 42:11 (2016), 1099–1102
Linking options:
https://www.mathnet.ru/eng/pjtf6253 https://www.mathnet.ru/eng/pjtf/v42/i22/p1
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Abstract page: | 22 | Full-text PDF : | 8 |
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