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This article is cited in 7 scientific papers (total in 7 papers)
Semiconductor physics
Current noise and efficiency droop of light-emitting diodes in defect-assisted carrier tunneling from an InGaN/GaN quantum well
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, Yu. G. Shreter Ioffe Institute, St. Petersburg
Abstract:
The current dependences of the spectral noise density and quantum efficiency in green and blue light-emitting diodes with InGaN/GaN quantum wells (QWs) are measured. It is shown that the noise level greatly increases at high currents at which there is a quantum efficiency droop. The mechanism by which the current noise is formed is associated with hopping transport via the deep states of color centers in GaN across the n barrier of an InGaN/GaN QW. The source of the noise is the hopping resistance of the space-charge region, which limits the current of thermally activated electrons into the QW. The efficiency droop and the increase in noise level are attributed to a change in the electric-field direction near the QW at high injection levels and to an increase in the tunneling leakage of holes from the QW. It is shown that the experimental frequency-related noise spectra having the shape of a Lorentzian spectrum at the working currents are related to the frequency of hopping between deep centers near the InGaN/GaN QW and to Maxwell relaxation in the space-charge region.
Received: 29.05.2018 Revised: 13.06.2018
Citation:
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, Yu. G. Shreter, “Current noise and efficiency droop of light-emitting diodes in defect-assisted carrier tunneling from an InGaN/GaN quantum well”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 104–110; Semiconductors, 53:1 (2019), 99–105
Linking options:
https://www.mathnet.ru/eng/phts5620 https://www.mathnet.ru/eng/phts/v53/i1/p104
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