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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, “Initial stages of growth of semipolar AlN on a nanopatterned Si(100) substrate”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 908–911   ; Semiconductors, 55:10 (2021), 812–815 |
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2020 |
| 2. |
E. A. Panyutin, Sh. Sh. Sharofidinov, T. A. Orlova, S. A. Snytkina, A. A. Lebedev, “Biplanar epitaxial AlN/SiC/$(n,p)$SiC structures for high-temperature functional electronic devices”, Zhurnal Tekhnicheskoi Fiziki, 90:3 (2020), 450–455 ; Tech. Phys., 65:3 (2020), 428–433 |
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2019 |
| 3. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, N. V. Seredova, A. V. Solomnikova, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Properties of semipolar GaN grown on a Si(100) substrate”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 1006–1009 ; Semiconductors, 53:7 (2019), 989–992 |
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2018 |
| 4. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Semipolar gan layers grown on nanostructured Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018), 45–51 ; Tech. Phys. Lett., 44:6 (2018), 525–527 |
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