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Publications in Math-Net.Ru |
Citations |
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2021 |
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I. P. Sotnikov, K. P. Kotlyar, R. R. Reznik, V. O. Gridchin, V. V. Lendyashova, A. V. Vershinin, V. V. Lysak, D. A. Kirilenko, N. A. Bert, G. E. Cirlin, “Specific features of structural stresses in InGaN/GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 785–788   ; Semiconductors, 55:10 (2021), 795–798 |
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V. O. Gridchin, R. R. Reznik, K. P. Kotlyar, A. S. Dragunova, N. V. Kryzhanovskaya, A. Yu. Serov, S. A. Kukushkin, G. E. Cirlin, “MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 32–35 |
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2020 |
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R. R. Reznik, V. O. Gridchin, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov, G. E. Cirlin, “Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 884–887 ; Semiconductors, 54:9 (2020), 1075–1077 |
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V. O. Gridchin, K. P. Kotlyar, R. R. Reznik, L. N. Dvoretskaya, A. V. Parfeneva, I. S. Mukhin, G. E. Cirlin, “Selective-area growth of GaN nanowires on patterned SiO$_{x}$/Si substrates by molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 32–35 ; Tech. Phys. Lett., 46:11 (2020), 1080–1083 |
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