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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
S. N. Nikolaev, K. Yu. Chernoglazov, A. V. Emelyanov, A. V. Sitnikov, A. N. Taldenkov, T. D. Patsaev, A. L. Vasil'ev, E. A. Gan'shina, V. A. Demin, N. S. Averkiev, A. B. Granovskii, V. V. Ryl'kov, “Anomalous behavior of the tunneling magnetoresistance in (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$/Si nanocomposite film structures below the percolation threshold: manifestations of the cotunneling and exchange effects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023), 46–54  ; JETP Letters, 118:1 (2023), 58–66 |
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2021 |
| 2. |
A. I. Ilyasov, A. V. Emelyanov, K. È. Nikiruy, A. A. Minnekhanov, E. V. Kukueva, I. A. Surazhevsky, A. V. Sitnikov, V. V. Ryl'kov, V. A. Demin, “Frequency-coded control of the conductance of memristors based on nanoscale layers of LiNbO$_3$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ composite in trained spiking neural networks”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 3–7  ; Tech. Phys. Lett., 47:9 (2021), 656–660 |
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2020 |
| 3. |
K. È. Nikiruy, A. I. Ilyasov, A. V. Emelyanov, A. V. Sitnikov, V. V. Ryl'kov, V. A. Demin, “Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$”, Fizika Tverdogo Tela, 62:9 (2020), 1562–1565 ; Phys. Solid State, 62:9 (2020), 1732–1735 |
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| 4. |
A. N. Matsukatova, A. V. Emelyanov, A. A. Minnekhanov, V. A. Demin, V. V. Rylkov, P. A. Forsh, P. K. Kashkarov, “Second-order nanoscale thermal effects in memristive structures based on poly-$p$-xylylene”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:6 (2020), 379–386 ; JETP Letters, 112:6 (2020), 357–363   |
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| 5. |
S. N. Nikolaev, A. V. Emelyanov, R. G. Chumakov, V. V. Ryl'kov, A. V. Sitnikov, M. Y. Presniakov, E. V. Kukueva, V. A. Demin, “The properties of memristive structures based on (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$, nanocomposites synthesized on SiO$_{2}$/Si substrates”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 257–263 ; Tech. Phys., 65:2 (2020), 243–249 |
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| 6. |
B. S. Shvetsov, A. A. Minnekhanov, A. A. Nesmelov, M. N. Martyshov, V. V. Ryl'kov, V. A. Demin, A. V. Emelyanov, “Conductance quantization in memristive structures based on poly-p-xylylene”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 913–917 ; Semiconductors, 54:9 (2020), 1103–1107 |
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| 7. |
A. N. Matsukatova, A. V. Emelyanov, A. A. Minnekhanov, D. A. Saharutov, A. Yu. Vdovichenko, R. A. Kamyshinskiy, V. A. Demin, V. V. Ryl'kov, P. A. Forsh, S. N. Chvalun, P. K. Kashkarov, “Memristors based on poly($p$-xylylene) with embedded silver nanoparticles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 25–28 ; Tech. Phys. Lett., 46:1 (2020), 73–76 |
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2019 |
| 8. |
B. S. Shvetsov, A. N. Matsukatova, A. A. Minnekhanov, A. A. Nesmelov, B. V. Goncharov, D. A. Lapkin, M. N. Martyshov, P. A. Forsh, V. V. Ryl'kov, V. A. Demin, A. V. Emelyanov, “Poly-para-xylylene-based memristors on flexible substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 40–43 ; Tech. Phys. Lett., 45:11 (2019), 1103–1106 |
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| 9. |
K. È. Nikiruy, A. V. Emelyanov, V. V. Ryl'kov, A. V. Sitnikov, V. A. Demin, “Adaptive properties of spiking neuromorphic networks with synapses based on memristive elements”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 19–23 ; Tech. Phys. Lett., 45:4 (2019), 386–390 |
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2018 |
| 10. |
K. È. Nikiruy, A. V. Emelyanov, V. A. Demin, V. V. Ryl'kov, A. V. Sitnikov, P. K. Kashkarov, “A precise algorithm of memristor switching to a state with preset resistance”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 20–28 ; Tech. Phys. Lett., 44:5 (2018), 416–419 |
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2017 |
| 11. |
D. A. Lapkin, S. N. Malakhov, V. A. Demin, S. N. Chvalun, “An organic memristive element based on single polyaniline/polyamide-6 fiber”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017), 24–30 ; Tech. Phys. Lett., 43:12 (2017), 1102–1104 |
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