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Publications in Math-Net.Ru |
Citations |
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1993 |
1. |
V. A. Gorbylev, A. I. Petrov, A. B. Petukhov, A. A. Chel'nyi, “Optimization of InGaAs/GaAs quantum-well strain-layer heterojunction laser structures”, Kvantovaya Elektronika, 20:5 (1993), 454–456 [Quantum Electron., 23:5 (1993), 391–393 ] |
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1991 |
2. |
V. A. Gorbylev, M. V. Zverkov, O. A. Labutin, A. I. Petrov, A. A. Chel'nyi, V. I. Shveĭkin, “Laser diode emitting cw 663 nm radiation at room temperature”, Kvantovaya Elektronika, 18:7 (1991), 824–825 [Sov J Quantum Electron, 21:7 (1991), 745–746 ] |
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1979 |
3. |
N. G. Kupriyanova, V. I. Molochev, V. V. Nikitin, A. I. Petrov, G. I. Semenov, “Investigation of the polarization of radiation from single-channel injection lasers”, Kvantovaya Elektronika, 6:8 (1979), 1789–1792 [Sov J Quantum Electron, 9:8 (1979), 1055–1056] |
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4. |
A. P. Bogatov, Yu. V. Gurov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, A. I. Petrov, K. A. Khaĭretdinov, “Single-frequency cw injection heterolaser tunable by an external dispersive resonator”, Kvantovaya Elektronika, 6:6 (1979), 1264–1270 [Sov J Quantum Electron, 9:6 (1979), 743–747] |
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5. |
V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. I. Petrov, A. S. Semenov, “Effect of the active region width in GaAs semiconductor injection lasers on single-frequency stimulated emission conditions”, Kvantovaya Elektronika, 6:4 (1979), 797–802 [Sov J Quantum Electron, 9:4 (1979), 472–475] |
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1975 |
6. |
V. I. Bilak, N. R. Dokuchaev, A. M. Onishchenko, V. A. Pashkov, A. I. Petrov, M. F. Stel'makh, N. P. Chernousov, “Stimulated emission from neodymium-doped yttrium aluminum garnet crystals pumped with injection lasers”, Kvantovaya Elektronika, 2:5 (1975), 1050–1054 [Sov J Quantum Electron, 5:5 (1975), 572–574] |
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1974 |
7. |
V. I. Borodulin, V. P. Konyaev, G. N. Malyavkina, G. T. Pak, A. I. Petrov, N. A. Prudnikova, V. I. Shveikin, “Investigation of injection lasers with a wide active region”, Kvantovaya Elektronika, 1:5 (1974), 1220–1222 [Sov J Quantum Electron, 4:5 (1974), 670–671] |
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8. |
V. I. Borodulin, V. A. Gorbylev, G. T. Pak, A. I. Petrov, N. P. Chernousov, V. I. Shveikin, “Injection laser with an average output power of 200 mW”, Kvantovaya Elektronika, 1:1 (1974), 163–164 [Sov J Quantum Electron, 4:1 (1974), 94] |
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1972 |
9. |
V. I. Borodulin, G. M. Malyavkina, G. T. Pak, A. I. Petrov, N. P. Chernousov, V. I. Shveikin, I. V. Yashumov, “Some aspects of the degradation of heterojunction lasers”, Kvantovaya Elektronika, 1972, no. 3(9), 108–110 [Sov J Quantum Electron, 2:3 (1972), 294–296] |
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1971 |
10. |
G. T. Pak, A. I. Petrov, E. G. Fainboim, N. P. Chernousov, V. I. Shveikin, I. V. Yashumov, “Internal parameters of injection lasers at 300°K”, Kvantovaya Elektronika, 1971, no. 5, 99–101 [Sov J Quantum Electron, 1:5 (1972), 508–509] |
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11. |
V. A. Gorbylev, G. T. Pak, A. I. Petrov, N. P. Chernousov, V. I. Shveikin, I. V. Yashumov, “Dependence of the stimulated emission threshold of injection lasers on the duration of pumping current pulses”, Kvantovaya Elektronika, 1971, no. 5, 97–99 [Sov J Quantum Electron, 1:5 (1972), 505–507] |
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