Internal parameters of injection lasers at 300°K

The results are given of an experimental investigation of the principal parameters of the active regions of injection lasers with diffused or epitaxial р–n junctions and with GaAs–AlAs heterojunctions. It is shown that heterojunction lasers with the active region bounded on both sides have better characteristics: Their gain factor is 10^–2 cm/A, the inversion current density is 2.1 kA/cm², and the losses amount to 26 cm^–1.