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This article is cited in 2 scientific papers (total in 2 papers)
Effect of the active region width in GaAs semiconductor injection lasers on single-frequency stimulated emission conditions
V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. I. Petrov, A. S. Semenov
Abstract:
Results are presented of an experimental investigation of the radiative characteristics of single-channel semiconductor injection lasers operated under cw conditions (77°K) with different active region widths (1.5–11μ). It is shown that two-sided horizontal confinement of the active region, using Ge-doped layers of an AlxGa1–xAs solid solution, makes it possible to produce a structure exhibiting good waveguide properties and low leakage currents. A study was made of the threshold, spectral, and watt-ampere characteristics of the radiation and the field distribution in the near- and far-field zones. An investigation of a large number of single-channel lasers showed that these emit a single axial mode over a broad range of the injection current. The maximum radiation power under single-frequency conditions was greater than 100 mW (in both directions). It was established that single-frequency emission terminated and a transition to multimode emission took place at a radiation power density of ~(1–2)×105 W/cm2 in the channel.
Received: 17.10.1978
Citation:
V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. I. Petrov, A. S. Semenov, “Effect of the active region width in GaAs semiconductor injection lasers on single-frequency stimulated emission conditions”, Kvantovaya Elektronika, 6:4 (1979), 797–802 [Sov J Quantum Electron, 9:4 (1979), 472–475]
Linking options:
https://www.mathnet.ru/eng/qe8912 https://www.mathnet.ru/eng/qe/v6/i4/p797
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