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Kvantovaya Elektronika, 1974, Volume 1, Number 5, Pages 1220–1222 (Mi qe8152)  

This article is cited in 1 scientific paper (total in 1 paper)

Brief Communications

Investigation of injection lasers with a wide active region

V. I. Borodulin, V. P. Konyaev, G. N. Malyavkina, G. T. Pak, A. I. Petrov, N. A. Prudnikova, V. I. Shveikin
Full-text PDF (492 kB) Citations (1)
Abstract: An investigation was made of the dependence of the threshold current density and of the differential quantum efficiency of AlAs-GaAs heterojunction lasers on the width of the active region. It was found that the excitation of higher modes reduced the efficiency when the width of the active region was increased.
Received: 03.12.1973
English version:
Soviet Journal of Quantum Electronics, 1974, Volume 4, Issue 5, Pages 670–671
DOI: https://doi.org/10.1070/QE1974v004n05ABEH008152
Document Type: Article
UDC: 621.378.35
PACS: 42.55.Px, 42.60.Jf, 42.60.Lh, 42.60.Da
Language: Russian


Citation: V. I. Borodulin, V. P. Konyaev, G. N. Malyavkina, G. T. Pak, A. I. Petrov, N. A. Prudnikova, V. I. Shveikin, “Investigation of injection lasers with a wide active region”, Kvantovaya Elektronika, 1:5 (1974), 1220–1222 [Sov J Quantum Electron, 4:5 (1974), 670–671]
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  • https://www.mathnet.ru/eng/qe/v1/i5/p1220
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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