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Publications in Math-Net.Ru |
Citations |
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2007 |
| 1. |
A. S. Kurkov, V. M. Paramonov, M. V. Yashkov, S. E. Goncharov, I. D. Zalevskii, “Multimode cladding-pumped erbium-doped fibre laser”, Kvantovaya Elektronika, 37:4 (2007), 343–344   [Quantum Electron., 37:4 (2007), 343–344   ] |
15
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2005 |
| 2. |
V. V. Bezotosnyi, N. F. Glushchenko, I. D. Zalevskii, Yu. M. Popov, V. P. Semenkov, E. A. Cheshev, “Highly efficient, compact diode-pumped acousto-optically <i>Q</i>-switched 1.064-μm Nd<sup>3+</sup>:YAG laser operating in cw and pulsed regimes”, Kvantovaya Elektronika, 35:6 (2005), 507–510 [Quantum Electron., 35:6 (2005), 507–510 ] |
5
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2003 |
| 3. |
I. A. Bufetov, V. V. Dudin, A. V. Shubin, A. K. Senatorov, E. M. Dianov, A. B. Grudinin, S. E. Goncharov, I. D. Zalevskii, A. N. Gur'yanov, M. V. Yashkov, A. A. Umnikov, N. N. Vechkanov, “Efficient 0.9-μm neodymium-doped single-mode fibre laser”, Kvantovaya Elektronika, 33:12 (2003), 1035–1037 [Quantum Electron., 33:12 (2003), 1035–1037 ] |
39
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2002 |
| 4. |
A. S. Kurkov, V. M. Paramonov, O. N. Egorova, O. I. Medvedkov, E. M. Dianov, I. D. Zalevskii, S. E. Goncharov, “A 1.65-μm fibre Raman amplifier”, Kvantovaya Elektronika, 32:8 (2002), 747–750 [Quantum Electron., 32:8 (2002), 747–750 ] |
3
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| 5. |
Yu. V. Abazadze, N. A. Litsarev, V. L. Pochtarev, V. A. Pashkov, A. Yu. Khachiev, A. A. Kazakov, Yu. P. Koval', V. A. Simakov, V. N. Neustrueva, G. S. Egorova, I. D. Zalevskii, A. A. Borodkin, S. M. Sapozhnikov, “Constructional features of a LISD-2M laser velocimeter and rangefinder”, Kvantovaya Elektronika, 32:3 (2002), 247–250 [Quantum Electron., 32:3 (2002), 247–250 ] |
1
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| 6. |
P. V. Bulaev, O. I. Govorkov, I. D. Zalevskii, V. G. Krigel, A. A. Marmalyuk, D. B. Nikitin, A. A. Padalitsa, A. V. Petrovskii, “Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes”, Kvantovaya Elektronika, 32:3 (2002), 216–218 [Quantum Electron., 32:3 (2002), 216–218 ] |
| 7. |
P. V. Bulaev, A. A. Marmalyuk, A. A. Padalitsa, D. B. Nikitin, A. V. Petrovskii, I. D. Zalevskii, V. P. Konyaev, V. V. Os'kin, M. V. Zverkov, V. A. Simakov, G. M. Zverev, “High-power semiconductor 0.89 – 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures”, Kvantovaya Elektronika, 32:3 (2002), 213–215 [Quantum Electron., 32:3 (2002), 213–215 ] |
7
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| 8. |
Yu. P. Rudnitskii, L. V. Shachkin, I. D. Zalevskii, “On the kinetics of nonradiative energy transfer in Yb – Er phosphate glasses excited by a diode laser”, Kvantovaya Elektronika, 32:3 (2002), 197–201 [Quantum Electron., 32:3 (2002), 197–201 ] |
4
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2001 |
| 9. |
A. S. Kurkov, V. M. Paramonov, O. N. Egorova, O. I. Medvedkov, E. M. Dianov, M. V. Yashkov, A. N. Gur'yanov, I. D. Zalevskii, S. E. Goncharov, “High-power erbium-doped fibre amplifier pumped by a phosphosilicate fibre Raman converter”, Kvantovaya Elektronika, 31:9 (2001), 801–803 [Quantum Electron., 31:9 (2001), 801–803 ] |
3
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| 10. |
A. Yu. Abazadze, V. V. Bezotosnyi, T. G. Gur'eva, E. I. Davydova, I. D. Zalevskii, G. M. Zverev, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, V. A. Shishkin, “150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics”, Kvantovaya Elektronika, 31:8 (2001), 659–660 [Quantum Electron., 31:8 (2001), 659–660 ] |
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1999 |
| 11. |
V. V. Bezotosnyi, E. I. Davydova, I. D. Zalevskii, V. P. Konyaev, A. A. Marmalyuk, A. A. Padalitsa, V. A. Shishkin, “Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the <i>p</i> — <i>n</i> junction”, Kvantovaya Elektronika, 27:1 (1999), 1–2 [Quantum Electron., 29:4 (1999), 283–284 ] |
1
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1998 |
| 12. |
V. V. Bezotosnyi, I. D. Zalevskii, Kh. Kh. Kumykov, N. V. Markova, “Experimental investigation and simulation of the output characteristics of powerful cw diode lasers operating in the spectral range 808 nm with a total efficiency of up to 50”, Kvantovaya Elektronika, 25:7 (1998), 611–615 [Quantum Electron., 28:7 (1998), 594–598 ] |
1
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| 13. |
V. V. Bezotosnyi, P. V. Bulaev, V. A. Gorbylev, I. D. Zalevskii, N. V. Markova, Yu. M. Popov, A. A. Padalitsa, “Continuous-wave 1-W injection lasers emitting near 808 nm with a total efficiency up to 50”, Kvantovaya Elektronika, 25:4 (1998), 303–304 [Quantum Electron., 28:4 (1998), 292–293 ] |
1
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1984 |
| 14. |
Yu. A. Bobrovnikov, V. M. Kazakova, V. I. Fistul, I. D. Zalevskii, “Impurity Band of Iron Clusters in Silicon”, Fizika i Tekhnika Poluprovodnikov, 18:2 (1984), 250–254 |
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2002 |
| 15. |
P. V. Bulaev, O. I. Govorkov, I. D. Zalevskii, V. G. Krigel, A. A. Marmalyuk, D. B. Nikitin, A. A. Padalitsa, A. V. Petrovskii, “Errata to the article: Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes”, Kvantovaya Elektronika, 32:6 (2002), 564 |
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