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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
N. A. Bogoslovskiy, P. V. Petrov, N. S. Averkiev, “Spin-fluctuation transition in the disordered Ising model”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:6 (2021), 383–390  ; JETP Letters, 114:6 (2021), 347–353   |
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2020 |
| 2. |
S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, A. B. Bylev, A. O. Yakubov, “Multilevel recording in Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 372–375 ; Semiconductors, 54:4 (2020), 450–453 |
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2019 |
| 3. |
N. A. Bogoslovskii, P. V. Petrov, N. S. Averkiev, “Impurity magnetic susceptibility of semiconductors for the direct exchange interaction in the Ising model”, Fizika Tverdogo Tela, 61:11 (2019), 2036–2039  ; Phys. Solid State, 61:11 (2019), 2005–2009 |
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2018 |
| 4. |
S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, K. D. Tsendin, “Estimation of the temperature of the current filament that forms upon switching in GeSbTe”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1503–1506 ; Semiconductors, 52:12 (2018), 1607–1610 |
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2017 |
| 5. |
A. A. Sherchenkov, S. A. Kozyukhin, P. I. Lazarenko, A. V. Babich, N. A. Bogoslovskii, I. V. Sagunova, E. N. Redichev, “Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb$_{2}$Te$_{3}$ chalcogenide semiconductors”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 154–160 ; Semiconductors, 51:2 (2017), 146–152 |
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2016 |
| 6. |
N. A. Bogoslovskii, P. V. Petrov, Yu. L. Ivanov, N. S. Averkiev, K. D. Tsendin, “Effect of Coulomb correlations on luminescence and absorption in compensated semiconductors”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 905–910 ; Semiconductors, 50:7 (2016), 888–893 |
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2013 |
| 7. |
N. A. Bogoslovskiy, Yu. A. Klimov, A. V. Savelyev, D. K. Shalyga, “Development of supercomputer simulation software based on Matlab source code”, Program Systems: Theory and Applications, 4:2 (2013), 21–42 |
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