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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12, Pages 1503–1506
DOI: https://doi.org/10.21883/FTP.2018.12.46765.8931 (Mi phts5668) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Amorphous, glassy, organic semiconductors

Estimation of the temperature of the current filament that forms upon switching in GeSbTe

S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, K. D. Tsendin

Ioffe Institute, St. Petersburg
Full-text PDF (298 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2018.12.46765.8931
Abstract: The current–voltage characteristics of thin-film samples of the GeSbTe system are measured in the current control mode. Voltage oscillations observed after switching are investigated. It is shown that these oscillations can be associated with the formation of a hot current filament and its gradual cooling. The size and temperatures of the current filament are estimated. It is shown that the characteristic temperature in the hot current filament corresponds to the temperature of the phase transition to the crystalline state.
Keywords: Current Filament, GeSbTe, Current Control Mode, Voltage Oscillations, Chalcogenide Glassy Semiconductors (CGS).
Received: 07.06.2018
Accepted: 18.06.2018
English version:
Semiconductors, 2018, Volume 52, Issue 12, Pages 1607–1610
DOI: https://doi.org/10.1134/S1063782618120084
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, K. D. Tsendin, “Estimation of the temperature of the current filament that forms upon switching in GeSbTe”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1503–1506; Semiconductors, 52:12 (2018), 1607–1610
Citation in format AMSBIB
\Bibitem{FefKazBog18}
\by S.~A.~Fefelov, L.~P.~Kazakova, N.~A.~Bogoslovskii, K.~D.~Tsendin
\paper Estimation of the temperature of the current filament that forms upon switching in GeSbTe
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 12
\pages 1503--1506
\mathnet{http://mi.mathnet.ru/phts5668}
\crossref{https://doi.org/10.21883/FTP.2018.12.46765.8931}
\elib{https://elibrary.ru/item.asp?id=36903642}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 12
\pages 1607--1610
\crossref{https://doi.org/10.1134/S1063782618120084}
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  • https://www.mathnet.ru/eng/phts/v52/i12/p1503
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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