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This article is cited in 1 scientific paper (total in 1 paper)
Micro- and nanocrystalline, porous, composite semiconductors
Multilevel recording in Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films
S. A. Fefelova, L. P. Kazakovaab, N. A. Bogoslovskiia, A. B. Bylevb, A. O. Yakubovc a Ioffe Institute, St. Petersburg
b Saint Petersburg State Forest Technical University under name of S. M. Kirov
c National Research University of Electronic Technology
Abstract:
The current–voltage characteristics measured on Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films in the current mode are studied. The effect of multilevel recording is established when applying sequential current pulses with increasing maxima. It is shown that this effect can be associated with memory-channel expansion. The memory-channel size is estimated. It is concluded that Ge$_{2}$Sb$_{2}$Te$_{5}$ films can be used as memristors.
Keywords:
chalcogenide glassy semiconductors, switching effect, phase-change memory, current filament, multilevel recording.
Received: 31.10.2019 Revised: 25.11.2019 Accepted: 25.11.2019
Citation:
S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, A. B. Bylev, A. O. Yakubov, “Multilevel recording in Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 372–375; Semiconductors, 54:4 (2020), 450–453
Linking options:
https://www.mathnet.ru/eng/phts5246 https://www.mathnet.ru/eng/phts/v54/i4/p372
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Abstract page: | 38 | Full-text PDF : | 10 |
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