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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
M. V. Dolgopolov, M. V. Elisov, S. A. Radzhapov, V. I. Chepurnov, A. S. Chipura, “Efficiency of activated nano-heterojunctions on silicon and silicon carbide substrates”, Comp. nanotechnol., 10:4 (2023), 91–102  |
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2021 |
| 2. |
V. I. Chepurnov, S. A. Radzhapov, M. V. Dolgopolov, G. V. Puzyrnaya, A. V. Gurskaya, “Efficiency determination problems for SiC*/Si microstructures and contact formation”, Comp. nanotechnol., 8:3 (2021), 59–68 |
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2017 |
| 3. |
A. V. Pavlikov, N. V. Latukhina, V. I. Chepurnov, V. Yu. Timoshenko, “Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 421–425  ; Semiconductors, 51:3 (2017), 402–406 |
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2014 |
| 4. |
V. I. Chepurnov, “Associates of dot defects of various nature in $\mathrm{SiC}$-phase of semiconductor heterostructure of $\mathrm{SiC//Si}$, received by endotaksiya method”, Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya, 2014, no. 7(118), 145–162 |
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2012 |
| 5. |
V. I. Chepurnov, “Distribution of point defects in the Si-faze including Sic-faze, formed by endotaxe method of semiconductor heterostructures”, Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya, 2012, no. 9(100), 164–179 |
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2011 |
| 6. |
V. I. Chepurnov, K. P. Sivakova, A. A. Ermoshkin, “Peculiarities of nanopoint damage process in the structure of por-SiC/Si, obtained by diffusion technology for chemical sensors”, Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya, 2011, no. 2(83), 179–183 |
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