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This article is cited in 10 scientific papers (total in 10 papers)
Manufacturing, processing, testing of materials and structures
Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures
A. V. Pavlikova, N. V. Latukhinab, V. I. Chepurnovc, V. Yu. Timoshenkoac a Faculty of Physics, Lomonosov Moscow State University
b Samara State Aerospace University
c Tomsk State University
Abstract:
Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm$^{-1}$ is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.
Received: 15.07.2016 Accepted: 03.08.2016
Citation:
A. V. Pavlikov, N. V. Latukhina, V. I. Chepurnov, V. Yu. Timoshenko, “Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 421–425; Semiconductors, 51:3 (2017), 402–406
Linking options:
https://www.mathnet.ru/eng/phts6221 https://www.mathnet.ru/eng/phts/v51/i3/p421
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