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Vestnik SamGU. Estestvenno-Nauchnaya Ser., 2011, Issue 2(83), Pages 179–183
(Mi vsgu60)
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This article is cited in 1 scientific paper (total in 1 paper)
Physics
Peculiarities of nanopoint damage process in the structure of por-SiC/Si, obtained by diffusion technology for chemical sensors
V. I. Chepurnova, K. P. Sivakovaa, A. A. Ermoshkinb a Dept. of Solid State Electronics and Nano Technology, Samara State
University, Samara, 443011, Russian Federation
b Dept. of of Metallurgy, Powder Metallurgy, Samara State Technical
University, Samara, 443100, Russian Federation
(published under the terms of the Creative Commons Attribution 4.0 International License)
Abstract:
Heteroepitaxy supported silicon carbide films as a perspective material for high-temperature electronics is considered. In the paper the analysis of the point damage process in homogeneous $\beta$-$SiC$ phase based on silicon matrix and gas phase hydrocarbons at 1360–1380$\,^\circ\!$C temperature range and dopant of Ga under normal pressure is given.
Keywords:
nano point defect formation, solid-state chemical gas sensor, por-SiC/Si, diffusion technology.
Received: 18.11.2010 Revised: 18.11.2010
Citation:
V. I. Chepurnov, K. P. Sivakova, A. A. Ermoshkin, “Peculiarities of nanopoint damage process in the structure of por-SiC/Si, obtained by diffusion technology for chemical sensors”, Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya, 2011, no. 2(83), 179–183
Linking options:
https://www.mathnet.ru/eng/vsgu60 https://www.mathnet.ru/eng/vsgu/y2011/i2/p179
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Abstract page: | 148 | Full-text PDF : | 68 | References: | 26 | First page: | 1 |
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