Vestnik SamGU. Estestvenno-Nauchnaya Ser.
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Vestnik SamU. Estestvenno-Nauchnaya Ser.:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Vestnik SamGU. Estestvenno-Nauchnaya Ser., 2011, Issue 2(83), Pages 179–183 (Mi vsgu60)  

This article is cited in 1 scientific paper (total in 1 paper)

Physics

Peculiarities of nanopoint damage process in the structure of por-SiC/Si, obtained by diffusion technology for chemical sensors

V. I. Chepurnova, K. P. Sivakovaa, A. A. Ermoshkinb

a Dept. of Solid State Electronics and Nano Technology, Samara State University, Samara, 443011, Russian Federation
b Dept. of of Metallurgy, Powder Metallurgy, Samara State Technical University, Samara, 443100, Russian Federation
Full-text PDF (555 kB) Citations (1)
(published under the terms of the Creative Commons Attribution 4.0 International License)
References:
Abstract: Heteroepitaxy supported silicon carbide films as a perspective material for high-temperature electronics is considered. In the paper the analysis of the point damage process in homogeneous $\beta$-$SiC$ phase based on silicon matrix and gas phase hydrocarbons at 1360–1380$\,^\circ\!$C temperature range and dopant of Ga under normal pressure is given.
Keywords: nano point defect formation, solid-state chemical gas sensor, por-SiC/Si, diffusion technology.
Received: 18.11.2010
Revised: 18.11.2010
Document Type: Article
UDC: 621.382
Language: Russian
Citation: V. I. Chepurnov, K. P. Sivakova, A. A. Ermoshkin, “Peculiarities of nanopoint damage process in the structure of por-SiC/Si, obtained by diffusion technology for chemical sensors”, Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya, 2011, no. 2(83), 179–183
Citation in format AMSBIB
\Bibitem{CheSivErm11}
\by V.~I.~Chepurnov, K.~P.~Sivakova, A.~A.~Ermoshkin
\paper Peculiarities of nanopoint damage process in the structure of \emph{por-SiC/Si}, obtained by diffusion technology for chemical sensors
\jour Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya
\yr 2011
\issue 2(83)
\pages 179--183
\mathnet{http://mi.mathnet.ru/vsgu60}
Linking options:
  • https://www.mathnet.ru/eng/vsgu60
  • https://www.mathnet.ru/eng/vsgu/y2011/i2/p179
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Вестник Самарского государственного университета. Естественнонаучная серия
    Statistics & downloads:
    Abstract page:148
    Full-text PDF :68
    References:26
    First page:1
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024