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Publications in Math-Net.Ru |
Citations |
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2021 |
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Zh. V. Smagina, V. A. Zinov'ev, M. V. Stepikhova, A. V. Peretokin, S. A. Dyakov, E. E. Rodyakina, A. V. Novikov, A. V. Dvurechenskii, “Dependence of luminescence properties of the ordered groups of epitaxially grown Ge(Si) nanoislands on the parameters of pit-patterned SOI substrate”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1210–1215 |
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V. A. Zinov'ev, A. V. Katsyuba, V. A. Volodin, A. F. Zinov'eva, S. G. Cherkova, Zh. V. Smagina, A. V. Dvurechenskii, A. Yu. Krupin, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, “Atomic structure and optical properties of CaSi$_2$ layers grown on CaF$_2$/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 725–728 ; Semiconductors, 55:10 (2021), 808–811 |
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2020 |
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Zh. V. Smagina, A. V. Novikov, M. V. Stepikhova, V. A. Zinov'ev, E. E. Rodyakina, A. V. Nenashev, S. M. Sergeev, A. V. Peretokin, P. A. Kuchinskaya, M. V. Shaleev, S. A. Gusev, A. V. Dvurechenskii, “Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 708–715 ; Semiconductors, 54:8 (2020), 853–859 |
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2019 |
4. |
Zh. V. Smagina, V. A. Zinovyev, E. E. Rodyakina, B. I. Fomin, M. V. Stepikhova, A. N. Yablonskii, S. A. Gusev, A. V. Novikov, A. V. Dvurechenskii, “Ordered arrays of Ge(Si) quantum dots embedded in two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1366–1371 ; Semiconductors, 53:10 (2019), 1329–1333 |
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2018 |
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S. A. Rudin, Zh. V. Smagina, V. A. Zinov'ev, P. L. Novikov, A. V. Nenashev, E. E. Rodyakina, A. V. Dvurechenskii, “Nucleation of three-dimensional Ge islands on a patterned Si(100) surface”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1346–1350 ; Semiconductors, 52:11 (2018), 1457–1461 |
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Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina, P. A. Kuchinskaya, B. I. Fomin, A. N. Yablonskii, M. V. Stepikhova, A. V. Novikov, A. V. Dvurechenskii, “Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1028–1033 ; Semiconductors, 52:9 (2018), 1150–1155 |
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2015 |
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A. F. Zinovieva, Zh. V. Smagina, A. V. Nenashev, L. V. Kulik, A. V. Dvurechenskii, “Unusual narrowing of the ESR line width in ordered structures with linear chains of Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:2 (2015), 120–124 ; JETP Letters, 102:2 (2015), 108–112 |
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N. P. Stepina, V. V. Valkovskii, Yu. M. Гальперин, Zh. V. Smagina, A. V. Dvurechenskii, “Conductance through chains of Ge/Si quantum dots: crossover from
one-dimensional to quasi-one-dimensional hopping”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:1 (2015), 24–28 ; JETP Letters, 101:1 (2015), 22–26 |
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2004 |
9. |
A. V. Dvurechenskii, Zh. V. Smagina, V. A. Zinov'ev, V. A. Armbrister, V. A. Volodin, M. D. Efremov, “Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:7 (2004), 411–415 ; JETP Letters, 79:7 (2004), 333–336 |
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2001 |
10. |
A. V. Dvurechenskii, V. A. Zinov'ev, Zh. V. Smagina, “Self-organization of an ensemble of Ge nanoclusters upon pulsed irradiation with low-energy ions during heteroepitaxy on Si”, Pis'ma v Zh. Èksper. Teoret. Fiz., 74:5 (2001), 296–299 ; JETP Letters, 74:5 (2001), 267–269 |
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