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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil地ikova, K. E. Kudryavtsev, A. V. Novikov, P. A. Yunin, M. A. Kalinnikov, E. V. Skorokhodov, M. V. Shaleev, Z. F. Krasil'nik, “Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 766–772   |
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2019 |
| 2. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil地ikova, P. A. Bushuikin, A. N. Yablonskii, A. V. Novikov, V. Yu. Davydov, P. A. Yunin, M. I. Kalinnikov, E. V. Skorokhodov, Z. F. Krasil'nik, “Emission properties of heavily doped epitaxial indium-nitride layers”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1395–1400 ; Semiconductors, 53:10 (2019), 1357–1362 |
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2017 |
| 3. |
P. A. Bushuikin, A. V. Novikov, B. A. Andreev, D. N. Lobanov, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil地ikova, E. V. Demidov, G. M. Savchenko, V. Yu. Davydov, “Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1594–1598 ; Semiconductors, 51:12 (2017), 1537–1541 |
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2016 |
| 4. |
D. N. Lobanov, A. V. Novikov, B. A. Andreev, P. A. Bushuikin, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil地ikova, “Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 264–268 ; Semiconductors, 50:2 (2016), 261–265 |
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2014 |
| 5. |
K. E. Kudryavtsev, D. I. Kryzhkov, L. V. Krasil地ikova, D. V. Shengurov, V. B. Shmagin, B. A. Andreev, Z. F. Krasil'nik, “Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 913–918 ; JETP Letters, 100:12 (2014), 807–811   |
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2005 |
| 6. |
M. V. Stepikhova, D. M. Zhigunov, V. G. Shengurov, V. Yu. Timoshenko, L. V. Krasil地ikova, V. Yu. Chalkov, S. P. Svetlov, O. A. Shalygina, P. K. Kashkarov, Z. F. Krasil'nik, “Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005), 614–617 ; JETP Letters, 81:10 (2005), 494–497 |
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