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Publications in Math-Net.Ru |
Citations |
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2022 |
1. |
R. Kh. Zhukavin, P. A. Bushuikin, V. D. Kukotenko, Yu. Yu. Choporova, N. Deßmann, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Gerasimov, B. A. Knyazev, N. V. Abrosimov, V. N. Shastin, “Detection of Ramsey oscillations in germanium doped with shallow donors upon the excitation of the $1s\to2p_0$ transition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:3 (2022), 139–145 ; JETP Letters, 116:3 (2022), 137–143 |
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2021 |
2. |
R. J. S. Abraham, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, M. L. W. Thewalt, “Thermal activation of valley-orbit states of neutral magnesium in silicon”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 500 |
3. |
Yu. A. Astrov, L. M. Portsel', V. B. Shuman, A. N. Lodygin, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, “Optical cross sections and oscillation strengths of magnesium double donor in silicon”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 299–303 |
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2020 |
4. |
K. A. Kovalevsky, Yu. Yu. Choporova, R. Kh. Zhukavin, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. V. Tsyplenkov, V. D. Kukotenko, B. A. Knyazev, V. N. Shastin, “Relaxation of the excited states of arsenic in strained germanium”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1145–1149 ; Semiconductors, 54:10 (2020), 1347–1351 |
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5. |
A. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, N. V. Abrosimov, “Behavior of lithium donors in bulk single-crystal isotopically pure $^{28}$Si$_{1-x}$ $^{72}$Ge$_{x}$ alloys”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1134–1138 ; Semiconductors, 54:10 (2020), 1336–1340 |
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6. |
A. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, N. V. Abrosimov, “Behavior of phosphorus donors in bulk single-crystal monoisotopic $^{28}$Si$_{1-x}$ $^{72}$Ge$_{x}$ alloys”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 933–937 ; Semiconductors, 54:9 (2020), 1123–1126 |
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7. |
R. Kh. Zhukavin, K. A. Kovalevsky, S. G. Pavlov, N. Deßmann, A. Pohl, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, H.-W. Hübers, V. N. Shastin, “Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 816–821 ; Semiconductors, 54:8 (2020), 969–974 |
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8. |
L. M. Portsel', V. B. Shuman, A. A. Lavrent'ev, A. N. Lodygin, N. V. Abrosimov, Yu. A. Astrov, “Investigation of the magnesium impurity in silicon”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 321–326 ; Semiconductors, 54:4 (2020), 393–398 |
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9. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan, D. S. Poloskin, “Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 45 ; Semiconductors, 54:1 (2020), 46–54 |
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2019 |
10. |
R. Kh. Zhukavin, K. A. Kovalevskii, Yu. Yu. Choporova, V. V. Tsyplenkov, V. V. Gerasimov, P. A. Bushuikin, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. N. Shastin, “Relaxation times and population inversion of excited states of arsenic donors in germanium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:10 (2019), 677–682 ; JETP Letters, 110:10 (2019), 677–682 |
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11. |
R. Kh. Zhukavin, S. G. Pavlov, A. Pohl, N. V. Abrosimov, H. Riemann, B. Redlich, H.-W. Hübers, V. N. Shastin, “Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1285–1288 ; Semiconductors, 53:9 (2019), 1255–1257 |
12. |
V. N. Shastin, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Rumyantsev, D. V. Shengurov, S. G. Pavlov, V. B. Shuman, L. M. Portsel', A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. M. Klopf, H.-W. Hübers, “Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1263–1266 ; Semiconductors, 53:9 (2019), 1234–1237 |
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13. |
N. A. Yarykin, V. B. Shuman, L. M. Portsel', A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. Weber, “DLTS investigation of the energy spectrum of Si : Mg crystals”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 799–804 ; Semiconductors, 53:6 (2019), 789–794 |
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14. |
V. B. Shuman, A. N. Lodygin, L. M. Portsel', A. A. Yakovleva, N. V. Abrosimov, Yu. A. Astrov, “Decomposition of a solid solution of interstitial magnesium in silicon”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 314–316 ; Semiconductors, 53:3 (2019), 296–297 |
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2018 |
15. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, D. S. Poloskin, G. A. Oganesyan, “Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1578 ; Semiconductors, 52:13 (2018), 1677–1685 |
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2017 |
16. |
R. Kh. Zhukavin, K. A. Kovalevskii, S. M. Sergeev, Yu. Yu. Choporova, V. V. Gerasimov, V. V. Tsyplenkov, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, V. N. Shastin, H. Schneider, N. Deßmann, O. A. Shevchenko, N. A. Vinokurov, G. N. Kulipanov, H.-W. Hübers, “Low-temperature intracenter relaxation times of shallow donors in germanium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:9 (2017), 555–560 ; JETP Letters, 106:9 (2017), 571–575 |
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2016 |
17. |
K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, V. N. Shastin, “Polarization of the induced THz emission of donors in silicon”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1701–1705 ; Semiconductors, 50:12 (2016), 1673–1677 |
18. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovskii, G. A. Oganesyan, D. S. Poloskin, “Some challenging points in the identification of defects in floating-zone $n$-type silicon irradiated with 8 and 15 Mev protons”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1313–1319 ; Semiconductors, 50:10 (2016), 1291–1298 |
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19. |
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. P. Markevich, N. V. Abrosimov, A. S. Kamyshan, A. V. Giro, K. A. Solyanikova, “Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1143–1145 ; Semiconductors, 50:8 (2016), 1122–1124 |
20. |
A. P. Detochenko, S. A. Denisov, M. N. Drozdov, A. I. Mashin, V. A. Gavva, A. D. Bulanov, A. V. Nezhdanov, A. A. Ezhevskii, M. V. Stepikhova, V. Yu. Chalkov, V. N. Trushin, D. V. Shengurov, V. G. Shengurov, N. V. Abrosimov, H. Riemann, “Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 350–353 ; Semiconductors, 50:3 (2016), 345–348 |
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21. |
A. V. Andrianov, A. O. Zahar'in, R. Kh. Zhukavin, V. N. Shastin, D. V. Shengurov, N. V. Abrosimov, “Terahertz emission at impurity electrical breakdown in Si(Li)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 18–23 ; Tech. Phys. Lett., 42:10 (2016), 1031–1033 |
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2015 |
22. |
K. A. Kovalevsky, N. V. Abrosimov, R. Kh. Zhukavin, S. G. Pavlov, H. -W. Hübers, V. V. Tsyplenkov, V. N. Shastin, “Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon”, Kvantovaya Elektronika, 45:2 (2015), 113–120 [Quantum Electron., 45:2 (2015), 113–120 ] |
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2014 |
23. |
A. V. Andrianov, A. O. Zahar'in, R. Kh. Zhukavin, V. N. Shastin, N. V. Abrosimov, A. V. Bobylev, “Terahertz intracenter photoluminescence of silicon with lithium at interband excitation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 876–880 ; JETP Letters, 100:12 (2014), 771–775 |
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2009 |
24. |
B. A. Andreev, A. A. Ezhevskii, N. V. Abrosimov, P. G. Sennikov, H. Pol, “Dependence of the energy of the resonance states of an acceptor in silicon on the host isotopic mass”, Pis'ma v Zh. Èksper. Teoret. Fiz., 90:6 (2009), 501–504 ; JETP Letters, 90:6 (2009), 455–458 |
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