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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Page 45 (Mi phts5299)  

This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies

V. V. Emtseva, N. V. Abrosimovb, V. V. Kozlovskic, G. A. Oganesyana, D. S. Poloskina

a Ioffe Institute, St. Petersburg, Russia
b Leibniz-Institute for Crystal Growth, Berlin, Germany
c Peter the Great St. Petersburg Polytechnical University, St. Petersburg, Russia
Full-text PDF (28 kB) Citations (1)
Abstract: Annealing processes of vacancy-impurity atom pairs in moderately doped $n$-type silicon grown by the floating-zone technique and subjected to 0.9 MeV electron irradiation are investigated by means of Hall effect and conductivity measurements taking over a wide temperature range of 20 to 300 K. Changes in the total concentrations of shallow donors and compensating acceptors in samples prior to and after irradiation as well in the course of isochronal annealing in a temperature interval of 100 to 700$^\circ$C are determined. It is demonstrated that the Fermi level at annealing stages between 100 and 260$^\circ$C plays an important part in recovery of the electrical properties of irradiated samples. There is evidence that the first annealing stage between 100 and 160$^\circ$C is associated with limited migration of vacancy-impurity atom pairs and their trapping by free phosphorus impurity atoms. As a consequence, complexes of vacancy-two impurity atoms appear. They are stable up to 600$^\circ$C. The complete restoration of the electrical parameters of irradiated samples is observed at 700$^\circ$C.
Keywords: silicon, irradiation, vacancy-phosphorus complexes, annealing.
Received: 03.06.2019
Revised: 05.09.2019
Accepted: 12.09.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 46–54
DOI: https://doi.org/10.1134/S1063782620010078
Bibliographic databases:
Document Type: Article
Language: English
Citation: V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan, D. S. Poloskin, “Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 45; Semiconductors, 54:1 (2020), 46–54
Citation in format AMSBIB
\Bibitem{EmtAbrKoz20}
\by V.~V.~Emtsev, N.~V.~Abrosimov, V.~V.~Kozlovski, G.~A.~Oganesyan, D.~S.~Poloskin
\paper Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 45
\mathnet{http://mi.mathnet.ru/phts5299}
\elib{https://elibrary.ru/item.asp?id=42571063}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 46--54
\crossref{https://doi.org/10.1134/S1063782620010078}
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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