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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 8, Pages 816–821
DOI: https://doi.org/10.21883/FTP.2020.08.49632.09 (Mi phts5202) 		 
This article is cited in 1 scientific paper (total in 1 paper)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi

R. Kh. Zhukavina, K. A. Kovalevskya, S. G. Pavlovb, N. Deßmannc, A. Pohld, V. V. Tsyplenkova, N. V. Abrosimove, H. Riemanne, H.-W. Hübersbd, V. N. Shastina

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Institute of Optical Sensor Systems, German Aerospace Center, Berlin, Germany
c Radboud University Nijmegen, FELIX Laboratory, 6525 ED Nijmegen, The Netherlands
d Department of Physics, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
e Leibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, Germany
Full-text PDF (321 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2020.08.49632.09
Abstract: The results of experimental and theoretical investigations dedicated to the uniaxial stress induced tuning of terahertz stimulated terahertz emission from silicon doped with bismuth under optical intracenter excitation. The frequency tuning of two emission lines from bismuth donor in silicon under uniaxial stress along [001] has been demonstrated in the experiments. The crosssections of stimulated Raman scattering for uniaxially stressed silicon doped with bismuth donors have been calculated.
Keywords: silicon, uniaxial stress, inversion, terahertz stimulated emission, stimulated Raman scattering.
Funding agency Grant number
Russian Foundation for Basic Research 19-02-00979
Deutsche Forschungsgemeinschaft 389056032
18-502-12077-ÍÍÈÎ
This study was supported by the Russian Foundation for Basic Research, project no. 19-02-00979, and the Joint Russian–German project (DFG no. 389056032 and 18-502-12077-NNIO). DLR collaborators confirm that the work is performed according to the contract.
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 8, Pages 969–974
DOI: https://doi.org/10.1134/S1063782620080278
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. Kh. Zhukavin, K. A. Kovalevsky, S. G. Pavlov, N. Deßmann, A. Pohl, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, H.-W. Hübers, V. N. Shastin, “Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 816–821; Semiconductors, 54:8 (2020), 969–974
Citation in format AMSBIB
\Bibitem{ZhuKovPav20}
\by R.~Kh.~Zhukavin, K.~A.~Kovalevsky, S.~G.~Pavlov, N.~De{\ss}mann, A.~Pohl, V.~V.~Tsyplenkov, N.~V.~Abrosimov, H.~Riemann, H.-W.~H\"ubers, V.~N.~Shastin
\paper Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 8
\pages 816--821
\mathnet{http://mi.mathnet.ru/phts5202}
\crossref{https://doi.org/10.21883/FTP.2020.08.49632.09}
\elib{https://elibrary.ru/item.asp?id=43800759}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 8
\pages 969--974
\crossref{https://doi.org/10.1134/S1063782620080278}
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