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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
D. V. Lavrukhin, R. R. Galiev, A. Yu. Pavlov, A. E. Yachmenev, M. V. Maytama, I. A. Glinskiy, R. A. Khabibullin, Yu. G. Goncharov, K. I. Zaitsev, D. S. Ponomarev, “Plasmonic photoconductive antennas for terahertz pulsed spectroscopy and imaging systems”, Optics and Spectroscopy, 126:5 (2019), 663–669   ; Optics and Spectroscopy, 126:5 (2019), 580–586 |
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2018 |
| 2. |
S. V. Mikhailovich, A. Yu. Pavlov, K. N. Tomosh, Yu. V. Fedorov, “Low-energy defectless dry etching of the AlGaN/AlN/GaN HEMT barrier layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 61–67 ; Tech. Phys. Lett., 44:5 (2018), 435–437 |
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2017 |
| 3. |
D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, A. Yu. Pavlov, D. N. Slapovskiy, I. A. Glinskiy, D. V. Lavrukhin, O. A. Ruban, P. P. Maltsev, “Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1267–1272 ; Semiconductors, 51:9 (2017), 1218–1223 |
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| 4. |
D. N. Slapovskiy, A. Yu. Pavlov, V. Yu. Pavlov, A. V. Klekovkin, “Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 461–466 ; Semiconductors, 51:4 (2017), 438–443 |
2
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| 5. |
A. Yu. Pavlov, V. Yu. Pavlov, D. N. Slapovskiy, “The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017), 96–103 ; Tech. Phys. Lett., 43:11 (2017), 1043–1046 |
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| 6. |
S. V. Mikhailovich, R. R. Galiev, A. V. Zuev, A. Yu. Pavlov, D. S. Ponomarev, R. A. Khabibullin, “The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN ÍÅÌÒ channel”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017), 9–14 ; Tech. Phys. Lett., 43:8 (2017), 733–735 |
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| 7. |
A. V. Ikonnikov, K. V. Marem'yanin, S. V. Morozov, V. I. Gavrilenko, A. Yu. Pavlov, N. V. Shchavruk, R. A. Khabibullin, R. R. Reznik, G. E. Cirlin, F. I. Zubov, A. E. Zhukov, Zh. I. Alferov, “Terahertz radiation generation in multilayer quantum-cascade heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017), 86–94 ; Tech. Phys. Lett., 43:4 (2017), 362–365 |
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2016 |
| 8. |
K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, P. P. Maltsev, “Investigation of the fabrication processes of AlGaN/AlN/GaN ÍÅÌÒs with in situ Si$_{3}$N$_{4}$ passivation”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1434–1438 ; Semiconductors, 50:10 (2016), 1416–1420 |
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| 9. |
R. A. Khabibullin, N. V. Shchavruk, A. Yu. Pavlov, D. S. Ponomarev, K. N. Tomosh, R. R. Galiev, P. P. Maltsev, A. E. Zhukov, G. E. Cirlin, F. I. Zubov, Zh. I. Alferov, “Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1395–1400 ; Semiconductors, 50:10 (2016), 1377–1382 |
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| 10. |
S. S. Arutyunyan, A. Yu. Pavlov, V. Yu. Pavlov, K. N. Tomosh, Yu. V. Fedorov, “On a two-layer Si$_{3}$N$_{4}$/SiO$_{2}$ dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1138–1142 ; Semiconductors, 50:8 (2016), 1117–1121 |
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