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This article is cited in 4 scientific papers (total in 4 papers)
The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures
A. Yu. Pavlov, V. Yu. Pavlov, D. N. Slapovskiy Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
Abstract:
Degradation of nonalloyed ohmic contacts with heavily doped GaN epitaxially grown to the heterostructures with two-dimensional electron gas has been investigated. The change in the relative contact resistivity at temperatures of up to 600$^\circ$C for the Ti/Pd/Au, Cr/Au, and Cr/Pd/Au metallization compositions has been studied. It is demonstrated that the Cr/Pd/Au metallization composition, the resistivity of which decreases at working temperatures of 400$^\circ$C, is the most resistant to the effect of temperature. It is shown for the first time that the largest contribution to the increase in the contact resistivity to two-dimensional electron gas upon heating above 400°C is made by the resistivity of the Cr/Pd/Au–$n^+$-GaN metal–dielectric structure, while, at temperatures of 400$^\circ$C and higher, the resistance between heavily doped GaN and two-dimensional electron gas decreases.
Received: 14.06.2017
Citation:
A. Yu. Pavlov, V. Yu. Pavlov, D. N. Slapovskiy, “The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017), 96–103; Tech. Phys. Lett., 43:11 (2017), 1043–1046
Linking options:
https://www.mathnet.ru/eng/pjtf6077 https://www.mathnet.ru/eng/pjtf/v43/i22/p96
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