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Danilov, L V

Statistics Math-Net.Ru
Total publications: 7
Scientific articles: 6

Number of views:
This page:72
Abstract pages:301
Full texts:190

https://www.mathnet.ru/eng/person186807
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List of publications on ZentralBlatt

Publications in Math-Net.Ru Citations
2020
1. M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, K. V. Kalinina, Yu. P. Yakovlev, P. S. Kop'ev, “Radiative recombination and impact ionization in semiconductor nanostructures (review)”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1267–1288  mathnet  elib; Semiconductors, 54:12 (2020), 1527–1547 2
2019
2. M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, R. V. Levin, I. A. Andreev, E. V. Kunitsyna, Yu. P. Yakovlev, “Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  50–54  mathnet  elib; Semiconductors, 53:1 (2019), 46–50 1
2018
3. M. P. Mikhailova, I. A. Andreev, G. G. Konovalov, L. V. Danilov, E. V. Ivanov, E. V. Kunitsyna, N. D. Il'inskaya, R. V. Levin, B. V. Pushnii, Yu. P. Yakovlev, “Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911  mathnet  elib; Semiconductors, 52:8 (2018), 1037–1042 1
2017
4. M. P. Mikhailova, V. A. Berezotets, R. V. Parfen'ev, L. V. Danilov, M. O. Safonchik, A. Hospodková, J. Pangrác, E. Hulicius, “Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1393–1399  mathnet  elib; Semiconductors, 51:10 (2017), 1343–1349 2
5. L. V. Danilov, M. P. Mikhailova, I. A. Andreev, G. G. Zegrya, “Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1196–1201  mathnet  elib; Semiconductors, 51:9 (2017), 1148–1152 2
2016
6. L. V. Danilov, A. A. Petukhov, M. P. Mikhailova, G. G. Zegrya, È. V. Ivanov, Yu. P. Yakovlev, “Features of high-temperature electroluminescence in an LED $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb heterostructure with high potential barriers”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  794–800  mathnet  elib; Semiconductors, 50:6 (2016), 778–784 3

2018
7. L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov, E. V. Ivanov, I. A. Andreev, B. V. Pushnyi, G. G. Zegrya, “Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476  mathnet  elib; Semiconductors, 52:4 (2018), 493–496 1

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