|
|
|
Publications in Math-Net.Ru |
Citations |
|
2024 |
| 1. |
E. A. Klimov, A. N. Klochkov, P. M. Solyankin, A. S. Sinko, A. Yu. Pavlov, D. V. Lavrukhin, S. S. Pushkarev, “Генерация терагерцевого излучения множественными псевдоморфными квантовыми ямами InGaAs/GaAs с ориентацией (100), (110) и (111)А и фотопроводящими антеннами на их основе”, Kvantovaya Elektronika, 54:1 (2024), 43–50  |
|
2020 |
| 2. |
G. B. Galiev, E. A. Klimov, A. A. Zaitsev, S. S. Pushkarev, A. N. Klochkov, “Study of the surface morphology, electrophysical characteristics, and photoluminescence spectra of GaAs epitaxial films on GaAs (110) substrates”, Optics and Spectroscopy, 128:7 (2020), 877–884  ; Optics and Spectroscopy, 128:7 (2020), 877–884 |
1
|
| 3. |
G. B. Galiev, E. A. Klimov, S. S. Pushkarev, A. A. Zaitsev, A. N. Klochkov, “Silicon-doped epitaxial films grown on GaAs(110) substrates: the surface morphology, electrical characteristics, and photoluminescence spectra”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1203–1210 ; Semiconductors, 54:11 (2020), 1417–1423 |
2
|
|
2019 |
| 4. |
G. B. Galiev, E. A. Klimov, A. N. Klochkov, V. B. Kopylov, S. S. Pushkarev, “Electrical and photoluminescence studies of $\{\mathrm{LT}-\mathrm{GaAs/GaAs} : \mathrm{Si}\}$ superlattices grown by MBE on (100)- and (111)A-oriented GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 258–266 ; Semiconductors, 53:2 (2019), 246–254 |
2
|
|
2018 |
| 5. |
S. S. Pushkarev, M. M. Grekhov, N. V. Zenchenko, “X-ray diffraction analysis of features of the crystal structure of GaN/Al$_{0.32}$Ga$_{0.68}$N HEMT-heterostructures by the Williamson–Hall method”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 586–590 ; Semiconductors, 52:6 (2018), 734–738 |
3
|
| 6. |
G. B. Galiev, E. A. Klimov, A. N. Klochkov, S. S. Pushkarev, P. P. Maltsev, “Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)- and (111)A-oriented GaAs substrates at lowered temperatures”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 395–401 ; Semiconductors, 52:3 (2018), 376–382 |
7
|
|
2017 |
| 7. |
G. B. Galiev, A. N. Klochkov, I. S. Vasil'evskii, E. A. Klimov, S. S. Pushkarev, A. N. Vinichenko, R. A. Khabibullin, P. P. Maltsev, “Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 792–797 ; Semiconductors, 51:6 (2017), 760–765 |
| 8. |
G. B. Galiev, S. S. Pushkarev, A. M. Buryakov, V. R. Bilyk, E. D. Mishina, E. A. Klimov, I. S. Vasil'evskii, P. P. Maltsev, “Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 529–534 ; Semiconductors, 51:4 (2017), 503–508 |
17
|
| 9. |
G. B. Galiev, M. M. Grekhov, G. Kh. Kitaeva, E. A. Klimov, A. N. Klochkov, O. S. Kolentsova, V. V. Kornienko, K. A. Kuznetsov, P. P. Maltsev, S. S. Pushkarev, “Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 322–330 ; Semiconductors, 51:3 (2017), 310–317 |
15
|
|
2016 |
| 10. |
I. S. Vasil'evskii, S. S. Pushkarev, M. M. Grekhov, A. N. Vinichenko, D. V. Lavrukhin, O. S. Kolentsova, “Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the $\omega$-scanning mode”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 567–573 ; Semiconductors, 50:4 (2016), 559–565 |
8
|
| 11. |
G. B. Galiev, E. A. Klimov, M. M. Grekhov, S. S. Pushkarev, D. V. Lavrukhin, P. P. Maltsev, “Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 195–203 ; Semiconductors, 50:2 (2016), 195–203 |
8
|
|
| Organisations |
|
| |
|
|
Contact us: