|
|
|
Publications in Math-Net.Ru |
Citations |
|
2020 |
| 1. |
P. A. Ivanov, A. S. Potapov, N. M. Lebedeva, I. V. Grekhov, “Avalanche breakdown in 4$H$-SiC Schottky diodes: reliability aspects”, Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020), 2133–2138   ; Tech. Phys., 65:12 (2020), 2041–2046 |
2
|
| 2. |
N. D. Il'inskaya, N. M. Lebedeva, Yu. M. Zadiranov, P. A. Ivanov, T. P. Samsonova, O. I. Kon'kov, A. S. Potapov, “Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 97–102 ; Semiconductors, 54:1 (2020), 144–149 |
2
|
|
2019 |
| 3. |
P. A. Ivanov, M. F. Kudoyarov, A. S. Potapov, T. P. Samsonova, “Correction of the reverse recovery characteristics of high-voltage 4$H$-SiC junction diodes using proton irradiation”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 862–864 ; Semiconductors, 53:6 (2019), 850–852 |
1
|
| 4. |
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, “Simulation of transient processes in 4$H$-SiC based semiconductor devices (taking into account the incomplete ionization of dopants in the atlas module of the SILVACO TCAD software package)”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 407–410 ; Semiconductors, 53:3 (2019), 385–387 |
|
2018 |
| 5. |
P. A. Ivanov, A. S. Potapov, I. V. Grekhov, “Influence of dopant incomplete ionization on the capacitance of a reverse-biased 4H-SiC $p^{+}$–$i$–$n^{+}$ diode”, Zhurnal Tekhnicheskoi Fiziki, 88:6 (2018), 955–958 ; Tech. Phys., 63:6 (2018), 928–931 |
2
|
| 6. |
P. A. Ivanov, T. P. Samsonova, A. S. Potapov, “Avalanche breakdown stability of high voltage (1430 V) 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1527–1531 ; Semiconductors, 52:12 (2018), 1630–1634 |
2
|
| 7. |
P. A. Ivanov, A. S. Potapov, M. F. Kudoyarov, T. P. Samsonova, “Effect of low-dose proton irradiation on the electrical characteristics of 4$H$-SiC junction diodes”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1187–1190 ; Semiconductors, 52:10 (2018), 1307–1310 |
3
|
| 8. |
P. A. Ivanov, A. S. Potapov, M. F. Kudoyarov, M. A. Kozlovskii, T. P. Samsonova, “The influence of heat treatment on the electrical characteristics of semi-insulating sic layers obtained by irradiating $n$-SiC with high-energy argon ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018), 11–16 ; Tech. Phys. Lett., 44:3 (2018), 229–231 |
5
|
| 9. |
P. A. Ivanov, O. I. Kon'kov, T. P. Samsonova, A. S. Potapov, “4$H$-SiC based subnanosecond (150 ps) high-voltage (1600 V) current breakers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018), 3–8 ; Tech. Phys. Lett., 44:2 (2018), 87–89 |
8
|
|
2017 |
| 10. |
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov, “Current–voltage characteristics of high-voltage 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes in the avalanche breakdown mode”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 390–394 ; Semiconductors, 51:3 (2017), 374–378 |
6
|
|
2016 |
| 11. |
P. A. Ivanov, M. F. Kudoyarov, M. A. Kozlovskii, A. S. Potapov, T. P. Samsonova, “Semi-insulating 4$H$-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into $n$-type epitaxial films”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 937–940 ; Semiconductors, 50:7 (2016), 920–923 |
6
|
| 12. |
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov, “Field dependence of the electron drift velocity along the hexagonal axis of 4$H$-SiC”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 900–904 ; Semiconductors, 50:7 (2016), 883–887 |
4
|
|
| Organisations |
|
| |
|
|
Contact us: