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Publications in Math-Net.Ru |
Citations |
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2020 |
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E. V. Fomin, A. D. Bondarev, I. P. Sotnikov, N. B. Bercu, L. Giraudet, M. Molinary, T. Maurer, N. A. Pikhtin, “Using AlN coatings to protect the surface of AlGaAs/GaAs system heterostructures from interaction with atmospheric oxygen”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 16–19   ; Tech. Phys. Lett., 46:3 (2020), 268–271 |
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2019 |
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P. V. Seredin, A. V. Fedyukin, V. A. Terekhov, K. A. Barkov, I. N. Arsent'ev, A. D. Bondarev, E. V. Fomin, N. A. Pikhtin, “On the phase composition, morphology, and optical and electronic characteristics of AlN nanofilms grown on misoriented GaAs (100) substrates”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1584–1592 ; Semiconductors, 53:11 (2019), 1550–1557 |
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N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, A. D. Bondarev, K. V. Karabeshkin, E. V. Fomin, A. E. Kalyadin, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, “Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 437–440 ; Semiconductors, 53:4 (2019), 415–418 |
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E. V. Fomin, A. D. Bondarev, A. I. Rumyantseva, T. Maurer, N. A. Pikhtin, S. A. Tarasov, “Surface topography and optical properties of thin AlN films produced on GaAs (100) substrate by reactive ion-plasma sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 38–41 ; Tech. Phys. Lett., 45:3 (2019), 221–224 |
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