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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 5, Pages 38–41
DOI: https://doi.org/10.21883/PJTF.2019.05.47396.17564
(Mi pjtf5515)
 

This article is cited in 2 scientific papers (total in 2 papers)

Surface topography and optical properties of thin AlN films produced on GaAs (100) substrate by reactive ion-plasma sputtering

E. V. Fominab, A. D. Bondarevb, A. I. Rumyantsevac, T. Maurerc, N. A. Pikhtinb, S. A. Tarasova

a Saint Petersburg Electrotechnical University "LETI"
b Ioffe Institute, St. Petersburg
c Laboratoire de Nanotechnologie et d’Instrumentation Optique, ICD CNRS UMR 6281, Université de Technologie de Troyes, Troyes, France
Full-text PDF (807 kB) Citations (2)
Abstract: A study of the surface topography and optical characteristics of thin AlN films used as passivating and antireflection coatings deposited on $n$-GaAs (100) substrates by reactive ion-plasma sputtering is reported. It was found that the process conditions affect the structure and the optical characteristics of the films, which makes it possible to obtain coatings with prescribed parameters. An analysis of the results furnished by ellipsometry and atomic-force microscopy of the surface shows that the refractive index of the films is correlated with the surface structure.
Received: 16.10.2018
Revised: 03.12.2018
Accepted: 12.12.2018
English version:
Technical Physics Letters, 2019, Volume 45, Issue 3, Pages 221–224
DOI: https://doi.org/10.1134/S1063785019030076
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Fomin, A. D. Bondarev, A. I. Rumyantseva, T. Maurer, N. A. Pikhtin, S. A. Tarasov, “Surface topography and optical properties of thin AlN films produced on GaAs (100) substrate by reactive ion-plasma sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 38–41; Tech. Phys. Lett., 45:3 (2019), 221–224
Citation in format AMSBIB
\Bibitem{FomBonRum19}
\by E.~V.~Fomin, A.~D.~Bondarev, A.~I.~Rumyantseva, T.~Maurer, N.~A.~Pikhtin, S.~A.~Tarasov
\paper Surface topography and optical properties of thin AlN films produced on GaAs (100) substrate by reactive ion-plasma sputtering
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 5
\pages 38--41
\mathnet{http://mi.mathnet.ru/pjtf5515}
\crossref{https://doi.org/10.21883/PJTF.2019.05.47396.17564}
\elib{https://elibrary.ru/item.asp?id=37481348}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 3
\pages 221--224
\crossref{https://doi.org/10.1134/S1063785019030076}
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  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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