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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. L. Zakhgeim, A. E. Ivanov, A. E. Chernyakov, “Features of operation of high-power AlInGaN LEDs at high pulse currents”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021), 32–35   ; Tech. Phys. Lett., 47:11 (2021), 834–837 |
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2020 |
| 2. |
N. M. Shmidt, E. I. Shabunina, A. E. Chernyakov, A. E. Ivanov, N. À. Talnishnikh, A. L. Zakhgeim, “Temperature-dependent decrease in efficiency in power blue InGaN/GaN LEDs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 45–48 ; Tech. Phys. Lett., 46:12 (2020), 1253–1256 |
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2018 |
| 3. |
V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovsky, M. F. Kudoyarov, A. V. Sakharov, G. A. Oganesyan, D. S. Poloskin, V. V. Lundin, “Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 804–811 ; Semiconductors, 52:7 (2018), 942–949 |
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2017 |
| 4. |
A. L. Zakhgeim, N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, A. E. Chernyakov, “Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 269–275 ; Semiconductors, 51:2 (2017), 260–266 |
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2016 |
| 5. |
V. N. Petrov, V. G. Sidorov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, H. Helava, Yu. N. Makarov, “On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1195–1201 ; Semiconductors, 50:9 (2016), 1173–1179 |
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| 6. |
V. V. Emtsev, E. E. Zavarin, M. A. Kozlovskii, M. F. Kudoyarov, V. V. Lundin, G. A. Oganesyan, V. N. Petrov, D. S. Poloskin, A. V. Sakharov, S. I. Troshkov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, V. V. Kozlovsky, “Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 39–46 ; Tech. Phys. Lett., 42:11 (2016), 1079–1082 |
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| 7. |
V. V. Emtsev, E. E. Zavarin, G. A. Oganesyan, V. N. Petrov, A. V. Sakharov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, “The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016), 80–86 ; Tech. Phys. Lett., 42:7 (2016), 701–703 |
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