Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 16, Pages 32–35
DOI: https://doi.org/10.21883/PJTF.2021.16.51326.18795
(Mi pjtf4708)
 

This article is cited in 3 scientific papers (total in 3 papers)

Features of operation of high-power AlInGaN LEDs at high pulse currents

A. L. Zakhgeima, A. E. Ivanovab, A. E. Chernyakova

a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (158 kB) Citations (3)
Abstract: The current dependences of the power and spectral characteristics, including their distribution (mapping) over the emitting surface, of AlInGaN LEDs of a “vertical” design have been studied in a wide range of operating currents up to $\sim$70 A. It was found that, starting from a certain level of excitation, it is incorrect to use the concept of the average current density when analyzing the efficiency drop. The main factor in reducing the internal quantum efficiency and the radiation output coefficient, which limits the energy capabilities of the LED, is the effect of current crowding to the contacts.
Keywords: AlGaInN LED, quantum efficiency, emission spectrum, near-field emission.
Received: 31.03.2021
Revised: 30.04.2021
Accepted: 11.05.2021
English version:
Technical Physics Letters, 2021, Volume 47, Issue 11, Pages 834–837
DOI: https://doi.org/10.1134/S1063785021080290
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. L. Zakhgeim, A. E. Ivanov, A. E. Chernyakov, “Features of operation of high-power AlInGaN LEDs at high pulse currents”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021), 32–35; Tech. Phys. Lett., 47:11 (2021), 834–837
Citation in format AMSBIB
\Bibitem{ZakIvaChe21}
\by A.~L.~Zakhgeim, A.~E.~Ivanov, A.~E.~Chernyakov
\paper Features of operation of high-power AlInGaN LEDs at high pulse currents
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 16
\pages 32--35
\mathnet{http://mi.mathnet.ru/pjtf4708}
\crossref{https://doi.org/10.21883/PJTF.2021.16.51326.18795}
\elib{https://elibrary.ru/item.asp?id=46323025}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 11
\pages 834--837
\crossref{https://doi.org/10.1134/S1063785021080290}
Linking options:
  • https://www.mathnet.ru/eng/pjtf4708
  • https://www.mathnet.ru/eng/pjtf/v47/i16/p32
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024