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This article is cited in 2 scientific papers (total in 2 papers)
Features of operation of high-power AlInGaN LEDs at high pulse currents
A. L. Zakhgeima, A. E. Ivanovab, A. E. Chernyakova a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
Abstract:
The current dependences of the power and spectral characteristics, including their distribution (mapping) over the emitting surface, of AlInGaN LEDs of a “vertical” design have been studied in a wide range of operating currents up to $\sim$70 A. It was found that, starting from a certain level of excitation, it is incorrect to use the concept of the average current density when analyzing the efficiency drop. The main factor in reducing the internal quantum efficiency and the radiation output coefficient, which limits the energy capabilities of the LED, is the effect of current crowding to the contacts.
Keywords:
AlGaInN LED, quantum efficiency, emission spectrum, near-field emission.
Received: 31.03.2021 Revised: 30.04.2021 Accepted: 11.05.2021
Citation:
A. L. Zakhgeim, A. E. Ivanov, A. E. Chernyakov, “Features of operation of high-power AlInGaN LEDs at high pulse currents”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021), 32–35; Tech. Phys. Lett., 47:11 (2021), 834–837
Linking options:
https://www.mathnet.ru/eng/pjtf4708 https://www.mathnet.ru/eng/pjtf/v47/i16/p32
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Abstract page: | 49 | Full-text PDF : | 13 |
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